New Far Infrared 8μm Laser Amplifying Device
A laser amplification and infrared laser technology, applied in the field of laser applications, can solve the problems of low light-to-light conversion efficiency
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specific Embodiment approach 1
[0028] Specific implementation mode 1, refer to figure 1 with figure 2 Describe this embodiment in detail, the novel far-infrared 8 μm laser amplifying device described in this embodiment, it comprises No. 1 coupling system 1-1, 45 ° reflection mirror 2, No. 2 coupling system 1-2, ZnGeP 2 Optical parametric oscillator 3, 45° plane mirror 6 and ZnGeP2 optical parametric amplifier 1;
[0029] A beam of 2.1 μm pulsed laser is vertically incident on the No. 1 coupling system 1-1, after being converted by the No. 1 coupling system 1-1, it is incident on the 45° reflector 2 at an incident angle of 45°, and reflected by the 45° reflector 2 It is vertically incident to the No. 2 coupling system 1-2, and then incident to ZnGeP after the beam conversion by the No. 2 coupling system 1-2 2 Optical Parametric Oscillator 3, via ZnGeP 2 The optical parametric oscillator 3 performs nonlinear conversion to obtain the output laser, which is composed of a beam of 8 μm long-wave infrared lase...
specific Embodiment approach 2
[0033] Embodiment 2. This embodiment is a further description of the novel far-infrared 8 μm laser amplification device described in Embodiment 1. In this embodiment, ZnGeP 2 Optical parametric oscillator 3 comprises No. 1 plane mirror 3-1, No. 2 reflector 3-2, No. 1 reflector 3-3, No. 2 plane mirror 4 and No. 1 ZnGeP 2 crystal 5;
[0034]The beam is transformed by No. 2 coupling system 1-2 and then incident on ZnGeP 2 The No. 1 plane mirror 3-1 in the optical parametric oscillator 3 has an incident angle of 45°, and after being transmitted by the No. 1 plane mirror 3-1, it is incident on the No. 1 ZnGeP 2 Crystal 5, ZnGeP No. 1 2 The crystal 5 is incident to the No. 2 plane mirror 4 at an incident angle of 45° after nonlinear conversion, and is reflected and transmitted by the No. 2 plane mirror 4;
[0035] After being reflected by the No. 2 plane mirror 4, it is incident on the No. 1 reflector 3-3 at an incident angle of 45°; after being reflected by the No. 1 reflector 3...
specific Embodiment approach 3
[0038] Specific embodiment three, this specific embodiment is a further description of the novel far-infrared 8 μm laser amplifying device described in specific embodiment one. In this embodiment, ZnGeP2 optical parametric amplifier 1 includes No. 3 plane mirror 7-1, No. 4 plane mirror 7-2, No. 3 reflector 8-1, No. 4 reflector 8-2, lens 9 and No. 2 ZnGeP 2 Crystal 10;
[0039] The transmitted 8 μm long-wave infrared laser and the transmitted 2.8 μm mid-wave infrared laser are incident on the No. 3 plane mirror 7-1 at an incident angle of 45°, and the 8 μm long-wave infrared laser is reflected by the No. 3 plane mirror 7-1, and at the same time 2.8μm mid-wave infrared laser for transmission;
[0040] The 8 μm long-wave infrared laser is reflected by the No. 3 plane mirror 7-1 and incident on the No. 3 reflector 8-1 at an incident angle of 45°, and incident on the No. 4 reflector at an incident angle of 45° after being reflected by the No. 3 reflector 8-1. Reflector 8-2, after...
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