Plasma etching method, plasma etching method, plasma processing method, and plasma processing device

Abstract

A plasma etching method includes a first step of attracting a substrate (S) onto a monopolar electrostatic chuck (15) in a first plasma (PL1), which is a plasma of a noble gas, and stopping generation of the first plasma (PL1) after the attracting of the substrate, and a second step of etching the substrate (S) in a second plasma (PL2), which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma (PL2) after the etching of the substrate. In the first step, the generation of the first plasma (PL1) is stopped when a positive voltage is applied from the monopolar electrostatic chuck (15) to the substrate (S). In the second step, the generation of the second plasma (PL2) is stopped when a negative voltage is applied from the monopolar electrostatic chuck (15) to the substrate (S).

Description

technical field [0001] The invention relates to a plasma etching method, a plasma etching device, a plasma processing method and a plasma processing device for processing a substrate adsorbed on a unipolar electrostatic chuck through plasma. Background technique [0002] The plasma etching method of etching a thin film on a substrate with plasma is used in the manufacturing process of various devices such as LEDs and displays. Fixing the position of the substrate during such etching utilizes, for example, a method of attracting the substrate by a unipolar electrostatic chuck (for example, refer to Patent Document 1). [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Japanese Patent Laid-Open No. 2001-15581 [0006] However, when a thin film on a substrate is etched by plasma, a product generated by a reaction in the plasma may drop from above the substrate onto the surface of the substrate. In addition, since the products generated by th...

AI Technical Summary

Problems solved by technology

In addition, regardless of the method of generating plasma, whether it is an inductive coupling method, a capacitive coupling method, or a microwave method, there is a problem that particles are generated on the surface of the substrate in the plasma etching method that uses plasma to etch.

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