Preparation method of material-on-insulator

Abstract

The invention provides a preparation method of a material-on-insulator. The method comprises the following steps: (S1) a substrate is provided; (S2) a first material layer, a boron-doped first material layer and a second material layer sequentially extend on the surface of the substrate; (S3) the step (S2) is repeated at least once; (S4) ion implantation is carried out, so that the ions are injected into the first material layer which is the furthest to the substrate; (S5) a base plate formed with an insulating layer on the surface is provided; and the insulating layer and the second material layer on the top layer are bonded to form a bonding wafer; and (S6) annealing treatment is carried out on the bonding wafer; and the boron-doped first material layer on an ion implantation layer absorbs the ions to form microcracks for stripping, so as to obtain the material-on-insulator. According to the preparation method, the substrate can be repeatedly utilized, so that the cost of the production material is reduced; the technological process is simplified; the ion implantation dosage is relatively low; improvement of the crystal quality is facilitated; the implantation cost is reduced; and the obtained material-on-insulator is very smooth in surface and does not need to be polished.

Description

technical field [0001] The invention belongs to the field of microelectronics and relates to a preparation method of a material on an insulator. Background technique [0002] According to the forecast of the international semiconductor industry technology development blueprint, the integrated circuit processing technology will be reduced to 15 nanometers in 2015 and 11 nanometers in 2019. As integrated circuit technology develops to 22 nanometers and below, the materials and device structures used in traditional devices will approach or reach their limits. In recent years, materials on insulators have been widely used in many fields such as low-voltage, low-power, high-temperature, and radiation-resistant devices because of their unique insulating buried layer structure, which can reduce the parasitic capacitance and leakage current of the substrate. SOI (silicon on insulator, Silicon on Insulator) structure is considered to be one of the key substrate materials to continue...

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing materials on insulators, which is used to solve the problems of high material cost, cumbersome process flow and on-insulator materials in the prior art for preparing materials on insulators. The problem with materials having a higher density of implanted defects

Images