A high-voltage multi-heterojunction device with a normally-off channel
A multi-heterojunction and heterojunction technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of complex growth and difficult control.
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Embodiment 1
[0034] A high-voltage heterojunction device with a normally-off channel in this example, such as figure 2 As shown, it includes a first semiconductor substrate layer 201, a second semiconductor buffer layer 202, a third semiconductor layer 203, a fourth semiconductor layer 204, a fifth semiconductor layer 205, and a sixth semiconductor layer 206 arranged sequentially from bottom to top; The two ends of the fourth semiconductor layer 204 are respectively provided with a first ohmic contact 101 and a second ohmic contact 103; the sixth semiconductor layer 206 has a metal electrode 102, and the metal electrode 102 is between the first ohmic contact 101 and the second ohmic contact. Between the ohmic contacts 103; the junction of the third semiconductor layer 203 and the fourth semiconductor layer 204 forms a first heterojunction, and the junction of the fourth semiconductor layer 204 and the fifth semiconductor layer 205 forms a second heterojunction junction, the junction of th...
Embodiment 2
[0038] A high-voltage multi-heterojunction device with a normally-off channel in this example, such as image 3 As shown, it includes a first semiconductor substrate layer 201, a second semiconductor buffer layer 202, a third semiconductor layer 203, a fourth semiconductor layer 204, a fifth semiconductor layer 205, a sixth semiconductor layer 206, a Seven semiconductor layers 207; both ends of the fourth semiconductor layer 204 are respectively provided with a first ohmic contact 101 and a second ohmic contact 103; the seventh semiconductor layer 207 has a metal electrode 102, and the metal electrode 102 is on the first Between the ohmic contact 101 and the second ohmic contact 103; the junction of the third semiconductor layer 203 and the fourth semiconductor layer 204 forms a first heterojunction, and the junction of the fourth semiconductor layer 204 and the fifth semiconductor layer 205 A second heterojunction is formed at the junction of the fifth semiconductor layer 205...
Embodiment 3
[0042] A high-voltage multi-heterojunction device with a normally-off channel in this example, such as Figure 4As shown, it includes a first semiconductor substrate layer 201, a second semiconductor buffer layer 202, a third semiconductor layer 203, a fourth semiconductor layer 204, and a fifth semiconductor layer 205 arranged sequentially from bottom to top; the third semiconductor layer 203 The first ohmic contact 101 and the second ohmic contact 103 are respectively provided at both ends of the two ends; the fifth semiconductor layer 205 has a metal electrode 102, and the metal electrode 102 is between the first ohmic contact 101 and the second ohmic contact 103; The junction of the third semiconductor layer 203 and the fourth semiconductor layer 204 forms a first heterojunction, the junction of the fourth semiconductor layer 204 and the fifth semiconductor layer 205 forms a second heterojunction, and the fourth semiconductor layer The self-polarization electric field of t...
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