Copper cleaning and protection formulations
A cleaning composition and material technology, applied in the direction of anti-corrosion composition, detergent compounding agent, detergent composition, etc., can solve the problem of high copper loss
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Embodiment 1
[0084] A cleaning composition comprising tetramethylammonium hydroxide, at least one amine, at least one corrosion inhibitor, at least one reducing agent, and water is prepared. The corrosion inhibitor concentration in the control was 1X, and other compositions containing 2X, 3X and 4X corrosion inhibitors were prepared from this. Such cleaning compositions were diluted 60:1 with deionized water. The anodic corrosion rate was measured under a voltage bias ranging from 0 to 0.4 V. The results are provided in Table 1.
[0085] Table 1: Anode copper corrosion rate as a function of corrosion inhibitor concentration.
[0086]
[0087] It can be seen that at a voltage bias of 0 to 0.4V, increasing the amount of copper corrosion inhibitor in the cleaning composition reduces the copper corrosion rate.
[0088] Likewise, a cleaning composition comprising tetramethylammonium hydroxide, at least one amine, at least one corrosion inhibitor, gallic acid, at least one other reducing a...
Embodiment 2
[0094] A cleaning composition was prepared comprising tetramethylammonium hydroxide, at least one amine, at least one corrosion inhibitor, at least one reducing agent, water, and 0.1% by weight surfactant. The cleaning composition was diluted 60:1 with deionized water. A second solution containing only 0.1% by weight surfactant in water was also prepared. Foaming was judged by shaking 5 mL of each solution in a 15 mL centrifuge tube and the level of foaming was compared. The results are provided in Table 3.
[0095] Table 3: Foaming Levels of 0.1 wt% Surfactant in DI Water and Cleaning Compositions
[0096] Surfactant
[0097] Copper etch rates were also determined for cleaning compositions comprising the above surfactants. The etch rate is shown in figure 1 Among them, the lowest etch rates were thus observed for cleaning compositions comprising DDBSA, n-dodecylphosphonic acid and dodecyl phosphate.
Embodiment 3
[0099] The surface with the slurry particles on it was prepared using barrier layer slurry Hitachi T915. Specifically, a 5% Hitachi T915 slurry was diluted with DI water and a formulation containing 83-95.99 wt% water, 2-8 wt% TMAH, 2-8 wt% MEA and 0.01-1 wt% adenosine was used (Formulation AA hereinafter) The pH was adjusted to 5.5. To prepare the surface, the slurry was deposited on the surface PETEOS without agitation for 60 seconds, followed by a 1 minute rinse with water to wash off the slurry. Various surfactants were added to the slurry during deposition and the average green mean intensity (AGMI) was measured to determine the extent of slurry deposition. AGMI is a measure of light scattered from particles on a copper surface, where the more particles on the surface, the higher the AGMI. The method was used to estimate how many particles were on the cleaned copper surface after CMP. The results are shown in Table 4.
[0100] Table 4: The extent of slurry deposition ...
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