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Insulator-on-silicon (SOI) radio-frequency device structure

A silicon-on-insulator, radio frequency switch technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problem that the linearity cannot meet the requirements, and achieve the effect of improving the linearity

Active Publication Date: 2015-12-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

However, for some specific applications, the linearity of existing silicon-on-insulator RF switching devices cannot meet the requirements

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  • Insulator-on-silicon (SOI) radio-frequency device structure
  • Insulator-on-silicon (SOI) radio-frequency device structure
  • Insulator-on-silicon (SOI) radio-frequency device structure

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Embodiment Construction

[0019] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0020] figure 1 A top view schematically shows the structure of a silicon-on-insulator radio frequency switching device according to a preferred embodiment of the present invention. figure 2 Schematically shows the structure of a silicon-on-insulator radio frequency switching device according to a preferred embodiment of the present invention along figure 1 A schematic cross-sectional view of the line A-A'. image 3 Schematically shows the structure of a silicon-on-insulator radio frequency switching device according to a preferred embodiment of the present invention along figure 1 A schematic cross-sectional view of the line B-B'. omitted for clarity figure 2 and image 3 Part of the upper connection structure.

[0021] Such as figure ...

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Abstract

The invention provides an insulator-on-silicon (SOI) radio-frequency device structure which comprises a buried oxide layer serving as an insulating layer, an active layer arranged on the buried oxide layer, and a body region formed on the active layer. A channel region, a source electrode region and a drain electrode region are formed in the device region, a gate oxide layer and gate polysilicon are sequentially arranged on the channel region, and the gate polysilicon extends to the body region in a direction vertical to the channel direction of the channel region. A high doping region is formed in an area where the body region is adjacent to the channel region, and the doping type of the high doping region is opposite to the doping type of the channel region. The high doping region is connected to a metal connection wiring connected to the gate polysilicon through a through hole.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a silicon-on-insulator radio frequency switch device structure. Background technique [0002] Silicon is the most widely used primary raw material in the semiconductor industry, and most chips are made of silicon wafers. Silicon-on-insulator (SOI, Silicon-on-insulator) is a special silicon chip, the main feature of its structure is to insert an insulating layer (buried oxide layer) between the active layer and the substrate layer to isolate the active layer and The electrical connection between substrates, this structural feature brings many advantages such as small parasitic effects, fast speed, low power consumption, high integration, and strong radiation resistance to silicon-on-insulator devices. [0003] Today, silicon-on-insulator technology has been used to fabricate switching devices. In general, for specific electronic circuit a...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12
Inventor 刘张李
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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