Monitoring device and method of laser energy density

Abstract

The invention discloses a monitoring device and method of a laser energy density. The device comprises an image monitoring and collecting module used for monitoring and collecting micro-textures generated on the surface of a silicon chip in an annealing process; an image control module used for processing and storing the micro-texture image collected by the image monitoring and collecting module so as to obtain a practical energy density corresponding to the micro-texture image; and a host circuit module used for carrying out calculation on the practical energy density of the micro-texture image obtained by the image monitoring and collecting module and an energy density directly obtained in a laser and adjusting the energy density of the laser according to the calculation result until the energy density is optimum. By adopting the monitoring device and method, the silicon chip after laser annealing is not damaged due to the influences of ion implantation, real-time monitoring and compensation are realized, the cost is substantially saved, and the yield rate is improved. By monitoring the micro-textures on the surface of a silicon chip, the output energy density of the laser is adjusted, so that the silicon chip is processed under the optimum technology energy density, and the yield rate of the process is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a monitoring device and method for laser energy density. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is mainly used in high voltage and high current devices. At present, IGBTs are mainly used in induction cookers and rice cookers in the field of home appliances, in servo drives, subway heads, and high-speed locomotives in the automotive field, and in a series of high-power devices such as motor control and industrial frequency converters in the industrial field. [0003] The main reason why the device can withstand high voltage is that it has a thicker N layer. The optimal production method is to directly fabricate the upper structure of the IGBT high-voltage power device on the N-type silicon wafer substrate, and then thin the wafer. The thickness of the N layer is controlled, and finally the backside ...

AI Technical Summary

Problems solved by technology

At present, to detect whether the laser energy density changes during the annealing process, the extended resistance probe technology is mainly used to test the resistance value of the fixed test point through four probes to evaluate whether the energy density is stable. The wafer surface is damaged and affected by the ion implantation process

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