A Junction Termination Structure for Lateral High Voltage Power Devices
A power device, lateral high voltage technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as electric field curvature effect at the connection of charge imbalance, improve the problem of charge imbalance, optimize breakdown voltage, and alleviate curvature effect of effect
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Embodiment 1
[0039] like Figure 5 As shown, the structure of this example includes a linear knot terminal structure and a curvature knot terminal structure;
[0040] The linear junction terminal structure is the same as that of the active region of the lateral high-voltage power device, including the drain N + Contact region 1, N-type drift region 2, P-type substrate 3, gate polysilicon 4, gate oxide layer 5, P-well region 6, source N + Contact area 7, source P + Contact region 8, P-type buried layer 9, N-type doped layer 10; P-well region 6 and N-type drift region 2 are located on the upper layer of P-type substrate 3, wherein P-well region 6 is located in the middle, and both sides are N-type The drift region 2, and the P-well region 6 is connected to the N-type drift region 2; the two sides of the N-type drift region 2 away from the P-well region 6 are the drain N + The surface of the contact region 1, the P-well region 6 has a source N connected to the metallized source + contact ...
Embodiment 2
[0045] like Image 6 As shown, the difference between this example and Example 1 is that in this example, the junction of the P-type buried layer 9 in the linear junction termination structure and the P-type buried layer 9 in the curvature junction termination structure is located in the N-type drift region 2. The principle Same as Example 1.
Embodiment 3
[0047] like Figure 7 As shown, the difference between this example and Embodiment 1 is that the inner wall of the P-type buried layer 9 in the linear junction termination structure coincides with the inner wall of the N-type drift region 2 in the straight junction termination structure, and the P-type buried layer 9 in the curvature junction termination structure The inner wall is located in the P-type substrate 3, and the inner wall of the P-type buried layer 9 in the curvature junction terminal structure extends to the middle to connect with the inner wall of the P-type buried layer 9 in the straight-line junction terminal structure. A circle, then a straight line with a distance of e, and finally a circular arc with a counterclockwise radius of one-twelfth of r1 to make it connected to the inner wall of the P-type buried layer 9 in the straight line junction terminal structure; in the curvature junction terminal structure The distance between the inner wall of the ring-sha...
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