Bidirectional transient voltage suppressing diode and manufacturing method thereof

Abstract

The invention provides a bidirectional transient voltage suppressing diode and a manufacturing method thereof. A second active region and a third active region, which are simultaneously formed and are of the same conductivity type, doped concentration and shape, are arranged in the diode. The longitudinal NPN or PNP structure of a traditional bidirectional transient voltage suppressing diode is changed into a transverse NPN or PNP structure. Via a current channel formed by a conducting layer, a buried layer and a first active region, symmetrical forward and backward suppressing voltage is ensured no matter whether forward voltage or backward voltage is applied to the diode. The whole diode is of a longitudinal structure, and the current carrying capacity of the diode is ensured without influencing encapsulation.

Description

technical field [0001] The invention belongs to the field of basic electrical components and relates to the preparation of semiconductor devices, in particular to a bidirectional transient voltage suppression diode and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor Diode (TVS for short) is a PN junction semiconductor diode device formed by silicon diffusion process. When the two poles of TVS are impacted by the reverse transient high energy, it can change the high impedance between the two poles to low impedance in 10-12s order to absorb the surge power up to several thousand watts, so that the two poles The voltage is clamped at a predetermined value, which effectively protects the precision components in the electronic circuit from being damaged by various surge pulses and static electricity. There are two types of TVS: Unidirectional TVS and Bi-directional TVS. The bidirectional TVS is equivalent to two unidirectional TVS conn...

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Problems solved by technology

[0004] The transient voltage suppression diode formed by this process is due to the asymmetry of the PN junction formed by the N- epitaxial layer 103 and the P well region 104 and the PN junction area and structure formed by the P well region 104 and the N+ active region 105 (P well region PN junction area formed by 104 and N+ active region 105 is always smaller than the PN junction area formed by N- epitaxial layer 103 and P well region 104, and is surrounded by the PN junction formed by P well region 104 and N+ active region 105), resulting in this The asymmetry of the positive and negative suppression voltage and surge current of the device makes the device work in the forward and reverse directions. One-way burning of the circuit occurs

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