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Magnetic tunnel junction unit and method for preparing same

A technology of magnetic tunnel junction and magnetic tunnel, which is applied to the manufacture/processing of magnetic field controlled resistors and electromagnetic devices, and can solve problems such as poor conductivity

Active Publication Date: 2015-12-30
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application aims to provide a ring-shaped magnetic tunnel junction unit and a method for preparing a ring-shaped magnetic tunnel junction unit, so as to solve the problem of poor conductivity between the upper electrode of the ring-shaped magnetic tunnel junction unit and the ring-shaped magnetic tunnel junction in the prior art

Method used

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  • Magnetic tunnel junction unit and method for preparing same
  • Magnetic tunnel junction unit and method for preparing same
  • Magnetic tunnel junction unit and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Provide a single crystal silicon substrate, and form a metal copper lower electrode on the substrate;

[0069] A ring-shaped magnetic tunnel junction is formed on the lower electrode, which includes from bottom to top: the first bonding layer TiN layer, the magnetic tunnel part, and the second bonding layer Ta layer, and the center of the ring-shaped magnetic tunnel junction is filled with LTN medium, and the ring-shaped magnetic tunnel junction The diameter of the inner ring is The diameter of the outer ring is

[0070] Forming a first insulating layer of nitrogen-doped silicon carbide layer whose upper surface is flush with the upper surface of the annular magnetic tunnel junction around the annular magnetic tunnel junction;

[0071] On the surface of the first insulating layer and on the surface of the annular magnetic tunnel junction, a conductive connection layer TaN layer covering the upper surface of the annular magnetic tunnel junction is formed, with a diamet...

Embodiment 2

[0075] Provide a single crystal silicon substrate, and form a metal copper lower electrode on the substrate;

[0076] A ring-shaped magnetic tunnel junction is formed on the lower electrode, which includes from bottom to top: a first bonding layer TiN layer, a magnetic tunnel part, and a second bonding layer Ta layer, and the center of the ring-shaped magnetic tunnel junction is filled with LTN medium, and the ring-shaped magnetic tunnel junction The diameter of the inner ring is The diameter of the outer ring is

[0077] A protective dielectric preparation layer LTN layer is formed on the upper surface of the lower electrode and the upper surface of the annular magnetic tunnel junction, a first preliminary insulating layer nitrogen-doped silicon carbide layer is formed on the upper surface of the protective dielectric preliminary layer, and a first preliminary insulating layer is formed on the upper surface of the first preliminary insulating layer. Dielectric layer black...

Embodiment 3

[0082] Provide a single crystal silicon substrate, and form a metal copper lower electrode on the substrate;

[0083] A ring-shaped magnetic tunnel junction is formed on the lower electrode, which includes from bottom to top: a first bonding layer TiN layer, a magnetic tunnel part, and a second bonding layer Ta layer, and the center of the ring-shaped magnetic tunnel junction is filled with LTN medium, and the ring-shaped magnetic tunnel junction The diameter of the inner ring is The diameter of the outer ring is

[0084] A protective dielectric preparation layer LTN layer is formed on the upper surface of the lower electrode and the upper surface of the annular magnetic tunnel junction, a first preliminary insulating layer nitrogen-doped silicon carbide layer is formed on the upper surface of the protective dielectric preliminary layer, and a first preliminary insulating layer is formed on the upper surface of the first preliminary insulating layer. Dielectric layer black...

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PUM

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Abstract

The invention discloses an annular magnetic tunnel junction unit and a method for preparing the same. The annular magnetic tunnel junction unit comprises a lower electrode, an annular magnetic tunnel junction and an upper electrode. The annular magnetic tunnel junction is arranged above the lower electrode, and the upper electrode is arranged above the annular magnetic tunnel junction. The annular magnetic tunnel junction unit further comprises a conductive connecting layer arranged between the upper electrode and the annular magnetic tunnel junction. According to the annular magnetic tunnel junction unit, the conductive connecting layer is additionally arranged between the annular magnetic tunnel junction and the upper electrode. In the forming process of the upper electrode, the conductive connecting layer provides a large reference size for the alignment of the upper electrode. Moreover, even if the upper electrode is slightly deviated in the process of alignment, the conductive connecting layer can form a conductive path between the upper electrode and the upper surface of the annular magnetic tunnel junction to prevent an open circuit between the upper electrode and the annular magnetic tunnel junction.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular, to an annular magnetic tunnel junction unit and a method for preparing the annular magnetic tunnel junction unit. Background technique [0002] In recent years, with the rapid improvement of semiconductor technology, semiconductor devices are required to develop towards lightness, thinness and miniaturization. At the same time, it also means that semiconductor devices are developing towards high speed, high integration and low power consumption. As an important member of the family of semiconductor devices, the development of Magnetic Random Access Memory (MRAM) has also become the focus of attention. [0003] Magnetic random access memory devices have been widely used as nonvolatile memories. In MRAM, data is stored by the magnetic state of the storage element. An MRAM typically includes transistors and a magnetic tunnel junction (MTJ) that stores data. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12H10N50/10H10N50/01
Inventor 张宏
Owner SEMICON MFG INT (SHANGHAI) CORP
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