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Optimization method for dynamic response performance of power device heat sink based on numerical iteration

A numerical iterative, power device technology, applied in the field of electronics, can solve the problem of ineffective analysis of the dynamic response performance of the heat sink, etc., to achieve the effect of optimizing the dynamic response performance, reducing the junction temperature fluctuation, and improving the power cycle rate

Active Publication Date: 2018-09-14
CHONGQING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the existing radiator design methods, only the steady-state thermal performance of the radiator can be analyzed and designed, and there is no effective method for the dynamic response process of the radiator, especially the dynamic response performance analysis in the IGBT power cycle

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  • Optimization method for dynamic response performance of power device heat sink based on numerical iteration
  • Optimization method for dynamic response performance of power device heat sink based on numerical iteration
  • Optimization method for dynamic response performance of power device heat sink based on numerical iteration

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with accompanying drawing and embodiment: figure 1 It is a schematic diagram of the principle of the present invention, figure 2 It is a numerical simulation curve diagram of the comprehensive Foster thermal network power cycle impact process before the optimization of the radiator of the present invention, image 3 It is a numerical simulation curve diagram of the comprehensive Foster thermal network power cycle impact process after the radiator of the present invention is optimized, Figure 4 is the general calculation model of IGBT real-time junction temperature feedback loss of the present invention, Figure 5 It is a structural diagram of the heat sink thermal resistance test of the present invention.

[0032] Such as figure 1 As shown, the method for optimizing the dynamic response performance of power device radiators based on numerical iteration in this embodiment includes

[0033] a. Esta...

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Abstract

The invention provides a method for optimizing the dynamic response performance of a heat radiator of a power device on the basis of numerical iteration. The method comprises the following steps of: a, building an integral Foster heat network model; b, obtaining a power circulation temperature curve according to the total response and the zero input response of the Foster heat network model; and c, building a heat radiator numeralization module through the power circulation temperature curve, and obtaining a heat network parameter of a physical heat radiator. The method has the advantages that the dynamic response performance of the heat radiator can be optimized; and the power circulation speed in an aging test is accelerated, or the junction temperature fluctuation amplitude in the actual use process is reduced, and the junction temperature fluctuation speed in the actual use process is decelerated, so that the requirement of power circulation speed regulation in different application occasions can be met. The test speed can be effectively accelerated. The junction temperature fluctuation can be effectively reduced when the method is applied to current converter external heat management.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a method for optimizing the dynamic response performance of a heat sink of a power device based on numerical iteration. Background technique [0002] I GBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). Research on IGBT Reliability is of great significance to improve the reliability of the converter. In theory, the design life of IGBT is generally more than 30 years, but in practical applications, IGBT needs to deal with large-scale random fluctuation power for a long time, resulting in The long-term large fluctuation of junction temperature seriously affects the service life of IGBT. In order to explore the failure mechanism of IGBT module and establish its life prediction model, it is necessary to carr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 周雒维张晏铭刘洪纪吴宇龚灿杨友耕王博孙鹏菊杜雄
Owner CHONGQING UNIV