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VDMOS (Vertical double-diffusion metal-oxide-semiconductor) transistor, integrated circuit (IC) and switching circuit

A technology of transistors and oxide semiconductors, applied in the direction of transistors, circuits, electrical components, etc., can solve the problem of high loss of controllers and VDMOS integrated circuits, and achieve the effect of small size and low circuit loss

Inactive Publication Date: 2016-01-06
东莞芯成电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a VDMOS transistor and its integrated IC and switch circuit, aiming to solve the problem of high loss of controller and VDMOS integrated circuit

Method used

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  • VDMOS (Vertical double-diffusion metal-oxide-semiconductor) transistor, integrated circuit (IC) and switching circuit
  • VDMOS (Vertical double-diffusion metal-oxide-semiconductor) transistor, integrated circuit (IC) and switching circuit
  • VDMOS (Vertical double-diffusion metal-oxide-semiconductor) transistor, integrated circuit (IC) and switching circuit

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Embodiment Construction

[0020] It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0021] Such as figure 1 As shown, the present invention provides a switch circuit, and the switch circuit includes:

[0022] Rectifier bridge 11, transformer 12, integrated IC13, load 14; the input end of described rectifier bridge 11 receives the alternating current of AC power output, and the output end is connected with one end of the primary side winding of described transformer 12; The primary side winding of described transformer 12 The other end of the side winding is connected to one end of the integrated IC 13 , the other end of the integrated IC 13 is grounded, and the secondary winding of the transformer 12 is connected in parallel with the load 14 .

[0023] Such as figure 2 with image 3 As shown, the integrated IC 13 includes a VDMOS (vertical double-diffusion metal-oxide-semiconductor, vertical doub...

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Abstract

The invention discloses a VDMOS transistor. The VDMOS transistor comprises a substrate, a first grid, a first source, a second grid and a second source are successively formed at one side of the substrate, and a shared drain is formed at the other side of the substrate; the first grid, the first source, the substrate and the shared drain form an enhanced tube; and the second grid, the second source, the substrate and the shared drain form an depletion type tube. The invention also discloses an IC and a switching circuit. The depletion type tube and the enhanced tube are integrated to form the VDMOS transistor, and the VDMOS transistor is characterized in that the circuit loss can be reduced.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a VDMOS transistor and its integrated IC and switch circuit. Background technique [0002] ACDC switching power supply and LED constant current driving power supply are composed of transformers, capacitors, diodes, switches, and control circuits for switching devices. The switching device and the control circuit can be made into an integrated circuit (IC) on a silicon chip, or can be made into an IC by packaging the controller and the MOS tube together. The latter switching device is usually a VDMOS (vertical double-diffusion metal-oxide-semiconductor, vertical double-diffused metal-oxide-semiconductor) transistor. The control circuit needs to be supplied with current, and also needs to obtain a signal of a sudden change in the drain voltage of the VDMOS transistor, so as to control the switching of the MOS transistor. [0003] In the prior art, there are two circuits for rea...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L27/088H02M7/217
CPCH01L29/7802H01L27/0883H02M7/217
Inventor 李学宁万锦嵩王新
Owner 东莞芯成电子科技有限公司
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