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Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method

A technology of physical vapor transmission and crystal growth furnace, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as the limitation of temperature gradient distribution uniformity, optimize coil energization mode, reduce axial temperature gradient, The effect of improving the uniformity of the temperature field

Active Publication Date: 2016-01-20
ENERGY RES INST OF SHANDONG ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional growth furnace optimization scheme focuses on improving the structure and operation process of the growth furnace, ignoring the influence of the winding method of the coil around the growth furnace and its fixing method on the uniformity of the temperature field. The understanding of this effect is still in the stage of production experience. The uniformity of the internal temperature gradient distribution is limited to a certain extent

Method used

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  • Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method
  • Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method
  • Device for improving temperature field uniformity of crystal growing furnace of physical vapor transport method

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Embodiment 1

[0023] Such as image 3 and figure 1 As shown, the present embodiment provides a device for improving the temperature field uniformity of the physical vapor transport method crystal growth furnace, including a crystal growth furnace, which includes a radio frequency power supply 1, a contact electrode 2, a coil 3, an insulating layer 4 and graphite The crucible 5, the radio frequency power supply 1 is contact-connected with the coil 3 through the contact electrode 2, an insulation layer 4 is arranged outside the graphite crucible 5, and a coil 3 is wound on the outer side of the insulation layer 4, and the coil 3 is evenly arranged on the insulation layer in a horizontal axis-symmetric manner. Layer 4 outside.

[0024] The number of coils 3 is single, and the single coil is wound on the outside of the insulation layer in a bow-shaped manner. A single coil is wound around the outer half circle of the insulation layer from top to bottom, and then the single coil is wound aroun...

Embodiment 2

[0029] This embodiment provides a device for improving the temperature field uniformity of the physical vapor transport method crystal growth furnace. The fonts are wound and arranged symmetrically on the outside of the insulation layer 4 . The number of coils can also be three or more, and the specific number of coils is selected according to the size and specification of the growth furnace.

[0030] This embodiment uses two coils, and the bending method of each coil is the same. At the symmetrical center of the two coils, the vacant position of one coil will be supplemented by the other, as image 3 Marked by the middle circle, the temperature in the furnace will be more uniform than that of a single coil; while the expansion diagram of a single coil is center-symmetrical, and the coil bending at the center is relatively concentrated, as shown in figure 2 Marked by the middle circle, this part can cause the temperature of the bending part in the furnace to be too high.

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Abstract

The invention relates to a device for improving the temperature field uniformity of a crystal growing furnace of a physical vapor transport method. The device comprises the crystal growing furnace. The crystal growing furnace comprises a radio frequency power supply, a contact electrode, a coil, a heat preservation layer and a graphite crucible. The coil is uniformly distributed outside the heat preservation layer in a horizontal axis symmetry mode. In addition, the coil can rotate around the heat preservation layer by rotating the device. The temperature field uniformity of the growing furnace is improved by changing the coil winding mode around the growing furnace, the coil can be formed by winding one or more wires, it is ensured that the coil is distributed around the growing furnace in the horizontal axis symmetry mode, and the large growing furnace axial temperature gradient caused by spiral distribution of the coil can be easily reduced. In addition, the radio frequency power supply is connected with the coil in a free contact mode, the coil can rotate around the growing furnace, the growing furnace is uniformly heated in a three-dimensional mode, and the temperature field uniformity of the growing furnace is improved.

Description

technical field [0001] The invention relates to a device for improving the temperature field uniformity of a crystal growth furnace by a physical vapor transport method, and belongs to the technical field of crystal growth furnaces. Background technique [0002] Silicon carbide crystals and aluminum nitride crystals have properties such as wide band gap, high thermal conductivity, and high breakdown electric field. They are suitable for the preparation of high-voltage, high-frequency, and high-temperature microelectronic devices, and are widely used in lighting, aerospace, radar detection and other fields. The physical vapor transport (PVT) method is the main method for growing silicon carbide crystals and aluminum nitride crystals. The heat source for the growth furnace is provided by the radio frequency induction graphite crucible. At present, in order to reduce defects such as micropipes and dislocations inside the crystal and improve the quality of the crystal, optimizin...

Claims

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Application Information

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IPC IPC(8): C30B29/38C30B29/36C30B23/00
Inventor 杨春振刘光霞陈成敏王立秋许敏
Owner ENERGY RES INST OF SHANDONG ACAD OF SCI
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