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Micro-nano structure closed pipeline and preparation method thereof

A technology of micro-nano structure and pipeline, applied in the direction of micro-structure technology, micro-structure device, manufacturing micro-structure device, etc., can solve the problems of low sealing performance, high technical difficulty, high cost, etc., and achieve extended service life, high heat conduction efficiency, The effect of low equipment investment

Active Publication Date: 2016-02-10
SHANGHAI LIANGZI HUIJING ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a micro-nano structure closed pipeline and its preparation method, which is used to solve the technical difficulty and high cost of the micro-nano structure closed pipeline and its preparation in the prior art. , not resistant to high temperature and high pressure or the pipeline is easy to block, low sealing performance, large thickness and other problems

Method used

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  • Micro-nano structure closed pipeline and preparation method thereof
  • Micro-nano structure closed pipeline and preparation method thereof
  • Micro-nano structure closed pipeline and preparation method thereof

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Embodiment Construction

[0051] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] see Figure 1 to Figure 5. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbi...

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Abstract

The present invention provides a micro-nano structure closed pipeline and a preparation method thereof. The preparation method comprises: 1) providing a substrate, forming a flexible material layer on the substrate surface, and forming a plurality of concave groove structures on the flexible material layer surface; 2) forming metal layers on the surfaces of each flexible material layer and various concave groove structures; and 3) providing a metal thin film, achieving the surface and surface fusion welding of the metal film and the metal layer by using an ultrasonic welding process, and forming a plurality of closed pipelines. According to the present invention, the ultrasonic welding process is used, the surfaces of the two layers of the metals are subjected to mutual friction during the work process to form the intermolecular fusion so as to form the closed pipeline, the fusion position is at the molecular layer level, and the concave groove is not affected; the process is simplified, and the product has characteristics of heat resistance and compression resistance; and characteristics of no glue adhering, product thickness reducing, sealing property ensuring and service life prolonging are provided.

Description

technical field [0001] The invention belongs to the field of micro-nano structure manufacturing, and in particular relates to a micro-nano structure closed pipeline and a preparation method thereof. Background technique [0002] The preparation of closed pipes with micro-nano structure scale can be realized on a silicon wafer by using micro-electro-mechanical systems (MEMS) technology. Generally speaking, the preparation of micro-nano closed channels in MEMS is first to coat a layer of photoresist on the silicon wafer as a sacrificial layer. The sacrificial layer generally includes organic materials such as PI, or inorganic materials such as copper and silicon, or directly on the A layer of oxide layer prepared on the surface of the silicon wafer, using a special mask to decompose part of the photoresist to show a specific interconnection pattern; then deposit the structural layer, and prepare a through hole on the structural layer to the surface of the sacrificial layer by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 平财明徐厚嘉刘升升方建聪
Owner SHANGHAI LIANGZI HUIJING ELECTRONICS CO LTD
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