Low-power-consumption high-PSRR band-gap reference source

A low power consumption, reference source technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problem of low output voltage accuracy

Active Publication Date: 2016-02-10
BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to overcome the defect that the bandgap reference source in the prior art is affected by the channel length modulation effec

Method used

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  • Low-power-consumption high-PSRR band-gap reference source
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  • Low-power-consumption high-PSRR band-gap reference source

Examples

Experimental program
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Effect test

Example Embodiment

[0093] Example one

[0094] See image 3 As shown, in the first embodiment, the low power consumption and high PSRR bandgap reference source circuit as described above is included, and the voltage feedback circuit 10 specifically includes: a seventh P-channel field effect transistor MP7, an eighth P-channel field effect transistor MP8, The ninth P-channel FET MP9, the tenth P-channel FET MP10, the eleventh P-channel FET MP11, the twelfth P-channel FET MP12, the thirteenth P-channel FET MP13, the tenth Four P-channel field effect transistors MP14, first N-channel field effect transistors MN1, second N-channel field effect transistors MN2, third N-channel field effect transistors MN3, fourth N-channel field effect transistors MN4, and fifth N-channel field effect transistors Tube MN5, sixth N-channel field effect tube MN6, compensation capacitor Cc.

[0095] Specifically, the source of the thirteenth P-channel field effect transistor MP13 is connected to the source of the fourteenth...

Example Embodiment

[0112] Example two

[0113] Such as Figure 4 As shown, the low power consumption and high PSRR bandgap reference source circuit provided in the second embodiment is basically the same as the circuit shown in the first embodiment, and the parts with the same structure are not repeated here.

[0114] Among them, in the second embodiment, see Figure 4 As shown, the gate of the first N-channel field effect transistor MN1 is connected to the source of the second N-channel field effect transistor MN2. At this time, the first N-channel field effect transistor MN1 and the second N-channel field effect transistor MN2 form a Gainboost structure.

[0115] MN1 and MN2 adopt the Gainboost structure to increase the output impedance of point F; at the same time, the Cascode current mirror composed of MP2 and MP5 also increases the output impedance of point D; the increase of output impedance increases the loop gain and reduces C, D The gain error at two points reduces the influence of the gain e...

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PUM

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Abstract

The invention discloses a low-power-consumption high-PSRR band-gap reference source. The low-power-consumption high-PSRR band-gap reference source comprises a first P-channel field-effect transistor, a second P-channel field-effect transistor, a third P-channel field-effect transistor, a fourth P-channel field-effect transistor, a fifth P-channel field-effect transistor, a sixth P-channel field-effect transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first double-polar-form transistor, a second double-polar-form transistor and a voltage feedback circuit. By adopting the double-layer current mirror structure and adding a biasing resistor, the influence of the channel length modulation effect between current mirrors is reduced, the accuracy of a current multiplication factor is guaranteed, and then detuning of output voltage is reduced.

Description

technical field [0001] The invention relates to the technical field of bandgap reference sources, in particular to a bandgap reference source with low power consumption and high PSRR. Background technique [0002] In integrated circuit design, it is mainly divided into two parts: analog circuit and digital circuit. The on-chip bandgap voltage reference source is the core module of the analog circuit, and its performance determines the performance and function realization of the entire analog circuit and even the entire chip. Currently the most widely used bandgap voltage references with the best performance indicators are implemented with bipolar devices. Its principle is to superimpose the voltage with positive temperature coefficient and the voltage with negative temperature coefficient with a certain coefficient to obtain a bandgap voltage with approximately zero temperature coefficient. [0003] With the advancement of technology and the improvement of people's require...

Claims

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Application Information

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IPC IPC(8): G05F1/56
Inventor 杨小坤原义栋胡毅何洋李振国
Owner BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY
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