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Low-power-consumption high-PSRR band-gap reference source

A low power consumption, reference source technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problem of low output voltage accuracy

Active Publication Date: 2016-02-10
BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to overcome the defect that the bandgap reference source in the prior art is affected by the channel length modulation effect and the output voltage accuracy is not high. According to one aspect of the present invention, a low power consumption and high PSRR bandgap reference source is proposed

Method used

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  • Low-power-consumption high-PSRR band-gap reference source

Examples

Experimental program
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Effect test

Embodiment 1

[0094] see image 3 As shown, in Embodiment 1, including the above-mentioned low power consumption high PSRR bandgap reference source circuit, its voltage feedback circuit 10 specifically includes: the seventh P-channel field effect transistor MP7, the eighth P-channel field effect transistor MP8, The ninth P-channel FET MP9, the tenth P-channel FET MP10, the eleventh P-channel FET MP11, the twelfth P-channel FET MP12, the thirteenth P-channel FET MP13, the tenth Four P-channel FETs MP14, the first N-channel FETs MN1, the second N-channel FETs MN2, the third N-channel FETs MN3, the fourth N-channel FETs MN4, and the fifth N-channel FETs The transistor MN5, the sixth N-channel field effect transistor MN6, and the compensation capacitor Cc.

[0095] Specifically, the source of the thirteenth P-channel field effect transistor MP13 is connected to the source of the fourteenth P-channel field effect transistor MP14 and connected to the external power supply VDD, and the gate of th...

Embodiment 2

[0113] Such as Figure 4 As shown, the low power consumption and high PSRR bandgap reference source circuit provided by Embodiment 2 is basically the same as the circuit shown in Embodiment 1, and the parts with the same structure will not be repeated here.

[0114] Wherein, in embodiment two, refer to Figure 4 As shown, the gate of the first N-channel field effect transistor MN1 is connected to the source of the second N-channel field effect transistor MN2. At this time, the first N-channel field effect transistor MN1 and the second N-channel field effect transistor MN2 form a Gainboost structure.

[0115] MN1 and MN2 adopt the Gainboost structure, which improves the output impedance of point F; at the same time, the Cascode current mirror composed of MP2 and MP5 also improves the output impedance of point D; the improvement of output impedance increases the loop gain and reduces C, D Gain error at two points, thereby reducing the effect of gain error on output voltage off...

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PUM

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Abstract

The invention discloses a low-power-consumption high-PSRR band-gap reference source. The low-power-consumption high-PSRR band-gap reference source comprises a first P-channel field-effect transistor, a second P-channel field-effect transistor, a third P-channel field-effect transistor, a fourth P-channel field-effect transistor, a fifth P-channel field-effect transistor, a sixth P-channel field-effect transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first double-polar-form transistor, a second double-polar-form transistor and a voltage feedback circuit. By adopting the double-layer current mirror structure and adding a biasing resistor, the influence of the channel length modulation effect between current mirrors is reduced, the accuracy of a current multiplication factor is guaranteed, and then detuning of output voltage is reduced.

Description

technical field [0001] The invention relates to the technical field of bandgap reference sources, in particular to a bandgap reference source with low power consumption and high PSRR. Background technique [0002] In integrated circuit design, it is mainly divided into two parts: analog circuit and digital circuit. The on-chip bandgap voltage reference source is the core module of the analog circuit, and its performance determines the performance and function realization of the entire analog circuit and even the entire chip. Currently the most widely used bandgap voltage references with the best performance indicators are implemented with bipolar devices. Its principle is to superimpose the voltage with positive temperature coefficient and the voltage with negative temperature coefficient with a certain coefficient to obtain a bandgap voltage with approximately zero temperature coefficient. [0003] With the advancement of technology and the improvement of people's require...

Claims

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Application Information

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IPC IPC(8): G05F1/56
Inventor 杨小坤原义栋胡毅何洋李振国
Owner BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY
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