A Static Random Access Memory Unit Anti-Single Event Effect

Abstract

The invention provides a static random memory unit having an anti-single event effect. The memory unit at least comprises: a first cross-coupling phase inverter being composed of a first pull-up transistor and a second pull-up transistor; a second cross-coupling phase inverter being composed of a first pull-down transistor and a second pull-down transistor; and a pass transistor which is composed of a first access transistor, a second access transistor, a third access transistor and a fourth access transistor. The static random memory unit can effectively prolong the feedback time required of turning the memory unit, so that the anti-single event upset capability of the memory unit can be improved in the situation that recovery time is not changed. The processes of the static random memory unit are completely compatible with digital logic process. The static random memory unit is less in parasitic capacitance, is low in power consumption, has a natural anti-single event latch-up capability and is free of increase of extra process cost.

Description

technical field [0001] The invention belongs to the technical field of memory design, and relates to a static random access memory unit, in particular to a static random access memory unit resistant to single event effect. Background technique [0002] Traditional 6T SRAM cells such as figure 1 As shown, it is composed of two pull-up tubes, pull-down tubes and access tubes; due to the harsh environment in which aerospace electronic equipment works, the memory cells are exposed to the radiation of various high-energy particles; however, the memory is more sensitive to high-particle radiation. Traditional memory cells are generally difficult to meet radiation resistance requirements; so designers often make improvements on the basis of traditional cells to improve the radiation resistance of the cells. [0003] Single event effect and total dose effect are two of the most common and important radiation effects. [0004] The so-called single event effect, such as figure 2 s...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a SRAM unit resistant to single event effects, which is used to solve the complicated manufacturing process caused by the introduction of resistors and capacitors in the random SRAM in the prior art. The problem of large device area

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