Integrated circuit structure capable of preventing coupling
An integrated circuit and coupling technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as increasing the complexity of circuit design, and achieve the effects of no cost, reduced crosstalk, and reduced inductance
Inactive Publication Date: 2016-02-10
高俊杰
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Adding a ground structure will thus increase the complexity of the circuit design (for example: additional metal layers are required)
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreExamples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0007] In a preferred embodiment, the forming process is repeated to form the upper metal layer on the IMD layer until the metal line is formed on the topmost metal layer. Usually a passivation layer is formed and bumping pads (or bondpads) are formed through the passivation layer. In other embodiments, the previously discussed metal lines and vias comprise other metals such as titanium or aluminum, and can be accomplished by blanket deposition and defined metal layers as is well known in the art. In the resulting structure, signals are shuttled through multiple layers of metal lines in the substrate to go to and from the various components. Therefore, the signal lines are spread over multiple metal layers.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention provides an integrated circuit structure capable of preventing coupling. A semiconductor structure for preventing coupling noise in integrated circuits and a method of forming the same are provided. The semiconductor structure includes a signal-grounded seal ring. The seal ring includes a plurality of metal lines, each in a respective metal layer and surrounding a circuit region of the semiconductor chip, a plurality of vias connecting respective metal lines, and a plurality of dielectric layers isolating each metal layer from any other metal layers. The seal ring may further include additional seal rings formed inside or outside the seal ring. The semiconductor structure may include laser fuses and protective rings. The protective rings are preferably signal grounded. Cross talk between sub circuits in a chip can be reduced by forming a seal ring extension between the sub circuits.
Description
technical field [0001] The present invention relates to an integrated circuit structure, and more particularly to an integrated circuit structure preventing coupling between signal lines. Background technique [0002] With the widespread use of stacked chips and system-in-package technologies, due to the smaller pitch between chips, the tighter the circuit distribution, the more obvious the coupling noise. Therefore, it has become an important issue in high-speed circuit design. Without countermeasures, the coupled noise may cause signal delays, logic errors, and even malfunction of the entire circuit. [0003] Crosstalk can be reduced by isolating structures (especially ground wires or planes). The traditional method has some disadvantages, so its usefulness is limited. In addition, signal lines typically travel from the base layer of the component through several layers to the topmost metal layer. Adding the ground structure will thus increase the complexity of the circ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L23/52
Inventor 高俊杰
Owner 高俊杰