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Five-junction solar energy cells including DBR structure

A technology of solar cells and sub-cells, applied in the field of solar photovoltaics, can solve the problems of affecting the diffusion length of minority carriers and high background carrier concentration, and achieve the effects of improving cell efficiency and saving production costs

Active Publication Date: 2016-02-24
ZHONGSHAN DEHUA CHIP TECH CO LTD
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Problems solved by technology

[0004] However, in the actual preparation process of GaInNAs materials, since GaInNAs needs to be grown at low temperature to ensure the effective incorporation of N atoms, a large number of C atoms will be introduced into the material at the same time, causing the background carrier concentration to be too high and affecting the minority carrier diffusion length.

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  • Five-junction solar energy cells including DBR structure

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Embodiment Construction

[0017] The present invention will be further described below in conjunction with specific embodiments.

[0018] Such as figure 1 As shown, the five-junction solar cell with a DBR structure in this embodiment includes a Ge substrate, the Ge substrate is a p-type Ge single chip; There are GaInAs / GaInP buffer layer, AlGaAs / GaInAsDBR, Ga 1-3x In 3x N x As 1-x Sub battery, AlAs / AlGaAsDBR, Ga 1-3y In 3y N y As 1-y Sub-cell, AlGaInAs sub-cell and AlGaInP sub-cell; the GaInAs / GaInP buffer layer and AlGaAs / GaInAsDBR are connected through a first tunnel junction, and the Ga 1-3x In 3x N x As 1-x The sub-cell and AlAs / AlGaAsDBR are connected through a second tunnel junction, the Ga 1-3y In 3y N y As 1-y The sub-cell and the AlGaInAs sub-cell are connected through a third tunnel junction, and the AlGaInAs and the AlGaInP sub-cell are connected through a fourth tunnel junction.

[0019] The AlGaAs / GaInAsDBR is used to reflect long-wavelength photons, with a reflection wavelength of 1000-1300 nm...

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Abstract

The invention discloses a five-junction solar energy cell including a DBR structure. According to the cell, a Ge single crystal slice is taken as a substrate, the Ge substrate is sequentially provided with a GaInAs / GaInP buffer layer, an AlGaAs / GaInAs DBR, a Ga1-3xIn3xNxAs1-x sub cell, an AlAs / AlGaAs DBR, a Ga1-3yIn3yNyAs1-y sub cell, an AlGaInAs sub cell and an AlGaInP sub cell, wherein the AlGaAs / GaInAs DBR is used for reflecting long-wave photons, and the AlAs / AlGaAs DBR is used for reflecting middle / long-wave photons. Through the cell, the photons can be absorbed and utilized secondarily by the sub cells, sub cell collection efficiency is improved, so photoelectric conversion efficiency of the five-junction solar energy cell is improved, moreover, thickness of the sub cells can be reduced, cell production efficiency is improved, and cell production cost is reduced.

Description

Technical field [0001] The invention relates to the technical field of solar photovoltaics, in particular to a five-junction solar cell containing a DBR (Distributed Bragg Reflector) structure. Background technique [0002] From the perspective of technological development, solar cells can be roughly divided into three categories: first-generation crystalline silicon solar cells, second-generation thin-film solar cells, and third-generation gallium arsenide concentrating (multi-junction) solar cells. At present, gallium arsenide compound solar cells are widely used in concentrated photovoltaic power generation (CPV) systems and space power systems because their conversion efficiency is significantly higher than that of crystalline silicon cells. The mainstream structure of gallium arsenide multi-junction cells is GaInP / GaInAs / Ge triple junction solar cells composed of GaInP, GaInAs and Ge sub-cells. The cell structure maintains lattice matching as a whole, and the band gap combin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
CPCH01L31/02168Y02E10/50
Inventor 张小宾张杨马涤非王雷毛明明刘雪珍张露潘旭杨翠柏
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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