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MMC submodule topological structure based on H-bridge

A topology and sub-module technology, applied in the field of flexible power transmission and distribution, can solve the problems of low utilization rate of the switch state and limit the engineering application of MMC sub-modules, and achieve the effect of reducing capacitance, reducing module volume and improving power density

Active Publication Date: 2016-02-24
TBEA SUNOASIS +2
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Problems solved by technology

However, the existing MMC system based on the H-bridge sub-module does not propose a corresponding strategy to reduce the fluctuation of the capacitor voltage for the huge capacitance value, and at the same time the utilization rate of the switch state is low, which greatly limits the engineering application of the MMC sub-module based on the H-bridge

Method used

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  • MMC submodule topological structure based on H-bridge
  • MMC submodule topological structure based on H-bridge
  • MMC submodule topological structure based on H-bridge

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Embodiment Construction

[0020] The present invention will be further explained below in conjunction with specific embodiments and accompanying drawings.

[0021] see Figure 1a ~ Figure 1d , the present invention includes four IGBT tubes connected in sequence, the four IGBT tubes include the first IGBT tube VT1, the second IGBT tube VT2, the third IGBT tube VT3 and the fourth IGBT tube VT4, the emitter stage of the first IGBT tube VT1 is connected to the The collector of the second IGBT tube VT2 is connected, the emitter of the third IGBT tube VT3 is connected to the collector of the fourth IGBT tube VT4, between the collector of the first IGBT tube VT1 and the collector of the third IGBT tube VT3, the second The emitter of the second IGBT tube VT2 and the emitter of the fourth IGBT tube VT4 are connected through the H bridge bus, the first IGBT tube VT1 and the second IGBT tube VT2 form the first half-bridge structure, the third IGBT tube VT3 and the second IGBT tube VT3 Four IGBT tubes VT4 consti...

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Abstract

The invention discloses an MMC submodule topological structure based on an H-bridge. The objective is that DC fault protection capacity of the H-bridge is inherited, the capacitance value of a DC capacitor is reduced, the module size is reduced and power density is enhanced. The adopted technical scheme is that the MMC submodule topological structure based on the H-bridge comprises four IBGT transistors which are connected in turn. A diode is connected on each of the four IBGT transistors in an antiparallel way. The H-bridge is formed by the four IBGT transistors and the diodes. The bus of the H-bridge is connected with the DC capacitor (Cdc). The H-bridge comprises two half-bridge structures. The midpoints of the two half-bridge structures are output of MMC submodules. Any one half-bridge structure of the two half-bridge structures is connected with an LC network. The loop of the LC network is connected with high level or low level of the H-bridge.

Description

technical field [0001] The invention relates to the technical field of flexible power transmission and distribution, in particular to an H-bridge-based MMC sub-module topology. Background technique [0002] Compared with the traditional voltage source converter, the modular multilevel converter (ModularMultileverConverter, MMC) has the advantages of good scalability, small harmonics, low switching frequency, and less requirements for consistent triggering of devices, and is especially suitable for DC transmission application occasions. [0003] In order to reduce the loss, the number of components and the control complexity, the early MMC adopted the half-bridge sub-module cascading form, but the MMC based on the half-bridge sub-module cannot effectively block the DC fault, so it is limited in practical engineering applications; the traditional MMC topology Another problem is that there are huge fluctuations in the output power of each bridge arm. At the same time, in order...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/12H02M3/155
CPCH02M3/155H02M7/12
Inventor 郝翔刘韬刘伟增陈名黎小林
Owner TBEA SUNOASIS
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