MMC submodule topological structure based on H-bridge
A topology and sub-module technology, applied in the field of flexible power transmission and distribution, can solve the problems of low utilization rate of the switch state and limit the engineering application of MMC sub-modules, and achieve the effect of reducing capacitance, reducing module volume and improving power density
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2016-02-24
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Abstract
Description
technical field
[0001] The invention relates to the technical field of flexible power transmission and distribution, in particular to an H-bridge-based MMC sub-module topology. Background technique
[0002] Compared with the traditional voltage source converter, the modular multilevel converter (ModularMultileverConverter, MMC) has the advantages of good scalability, small harmonics, low switching frequency, and less requirements for consistent triggering of devices, and is especially suitable for DC transmission application occasions.
[0003] In order to reduce the loss, the number of components and the control complexity, the early MMC adopted the half-bridge sub-module cascading form, but the MMC based on the half-bridge sub-module cannot effectively block the DC fault, so it is limited in practical engineering applications; the traditional MMC topology Another problem is that there are huge fluctuations in the output power of each bridge arm. At the same time, in order...
Examples
Embodiment Construction
[0020] The present invention will be further explained below in conjunction with specific embodiments and accompanying drawings.
[0021] see Figure 1a ~ Figure 1d , the present invention includes four IGBT tubes connected in sequence, the four IGBT tubes include the first IGBT tube VT1, the second IGBT tube VT2, the third IGBT tube VT3 and the fourth IGBT tube VT4, the emitter stage of the first IGBT tube VT1 is connected to the The collector of the second IGBT tube VT2 is connected, the emitter of the third IGBT tube VT3 is connected to the collector of the fourth IGBT tube VT4, between the collector of the first IGBT tube VT1 and the collector of the third IGBT tube VT3, the second The emitter of the second IGBT tube VT2 and the emitter of the fourth IGBT tube VT4 are connected through the H bridge bus, the first IGBT tube VT1 and the second IGBT tube VT2 form the first half-bridge structure, the third IGBT tube VT3 and the second IGBT tube VT3 Four IGBT tubes VT4 consti...