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Integrated electro-optic modulator and method for increasing 3dB bandwidth of integrated electro-optic modulator through substrate hollowing

An integrated electro-optical and modulator technology, applied in instruments, optics, nonlinear optics, etc., can solve the problems of microwave signal loss and microwave absorption loss, and achieve the effect of improving 3dB bandwidth and low signal loss.

Active Publication Date: 2016-03-02
WUHAN POST & TELECOMM RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) The loss of microwave signals caused by the capacitance and resistance of the electro-optic interaction medium in the electro-optic modulation interaction area of ​​the integrated electro-optic modulator;
[0005] (2) The microwave loss caused by the parasitic parameters of the traveling-wave electrode of the integrated electro-optic modulator;
[0006] (3) The microwave absorption loss caused by the dielectric material of the substrate of the whole integrated electro-optic modulator

Method used

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  • Integrated electro-optic modulator and method for increasing 3dB bandwidth of integrated electro-optic modulator through substrate hollowing
  • Integrated electro-optic modulator and method for increasing 3dB bandwidth of integrated electro-optic modulator through substrate hollowing
  • Integrated electro-optic modulator and method for increasing 3dB bandwidth of integrated electro-optic modulator through substrate hollowing

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Embodiment Construction

[0034] For the loss caused by the high-resistance substrate used in the integrated electro-optic modulator, the physical mechanism of the loss is as follows:

[0035] When the high-frequency microwave signal propagates on the electrode, its electromagnetic field is mainly bound in the metal medium area in the middle of the electrode to form a propagating electromagnetic field and propagate forward. For a general integrated electro-optic modulator, the microwave electromagnetic field of the signal transmitted on the electrode is mainly covered by the electrode surface. Layer, active modulation area and substrate material layer three layers of materials interact. The layer of material covered on the surface of the electrode is generally air, silicon dioxide or other materials with low conductivity, so the attenuation effect of this layer of material on the signal is limited; the active area located in the middle layer, due to the influence of the material system And the limitati...

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Abstract

The invention discloses an integrated electro-optic modulator and a method for increasing the 3dB bandwidth of the integrated electro-optic modulator through substrate hollowing. The method comprises the following steps that an electric field intensity distribution area on the cross section of a modulating area of the integrated electro-optic modulator is calculated; the overlapping portion of the electric field intensity distribution area and a substrate material serves as a hollowing area; the sizes and positions of hollowing windows needing to be opened are determined in a buried silicon-dioxide layer on the portions, on the two sides of electrodes, of the hollowing area, and the hollowing windows are etched; hollowing operation is performed on the hollowing area through the hollowing windows. According to the method, the overlapping portion of the calculated electric field intensity distribution area on the cross section of the modulating area of the integrated electro-optic modulator and the substrate material serves as the hollowing area, the hollowing windows are opened in the buried silicon-dioxide layers, hollowing operation is performed on the hollowing area through the hollowing windows, loss of the substrate material to signals on the electrodes is reduced to the minimum extent, and therefore the 3dB bandwidth of the integrated electro-optic modulator is significantly increased.

Description

technical field [0001] The invention relates to the field of optical communication integrated devices, in particular to an integrated electro-optical modulator and a method for increasing its 3dB bandwidth by hollowing out a substrate. Background technique [0002] With the continuous progress and development of society, human beings have an increasing demand for information, resulting in an exponential growth in the amount of information data. The rapid development of optical communication network technology provides a reliable and effective solution to this problem. , the electro-optical modulator is one of the core devices of the entire optical communication network, responsible for converting electrical signals into optical signals that can be transmitted in the optical communication network. Traditional electro-optic high-speed modulators based on lithium niobate materials often have large dimensions, on the order of 5-10 cm, and consume large power consumption. These s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/03G02F1/015
CPCG02F1/015G02F1/0305G02F1/0316G02F1/0121G02F1/025G02F1/2255G02F1/0356
Inventor 李淼峰肖希王磊
Owner WUHAN POST & TELECOMM RES INST CO LTD