Method for controlling fin size of FINFET device

Abstract

The application discloses a method for controlling the fin size of a FINFET device. The method comprises the steps of providing a substrate; forming fins on the substrate; measuring the key size of the fins; searching the previously obtained consumption amount of silicon during different annealing processes according to the difference between the key size of fins and the specification requirement of fins so as to determine the annealing process for the fins on the substrate; and annealing the fins on the substrate according to the determined annealing process. According to the invention, the phenomenon of the repeated lithography or the product scrap due to the fact that the size of fins cannot meet the specification requirement can be avoided. Meanwhile, the size of fins can be efficiently modified or controlled, and the waste is avoided.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing technology, in particular to a method for controlling the fin size of a fin field effect transistor device. Background technique [0002] Fin Field-Effect Transistor (FinField-Effect Transistor, FinFET) is a new type of multi-gate 3D transistor. Compared with traditional planar transistors, FinFET devices can provide more significant advantages in power consumption and performance. [0003] Since the width of Fin is very small, the width of 14 / 16nm devices is generally about 10nm. It is difficult to control the photolithography and etching with the current lithography equipment. At present, the more common process for forming Fin (fin) is Align the second pattern exposure (self-aligned double-pattering, SADP) process. The steps of forming Fin through the SADP process generally include: the first step, performing thin film deposition, photolithography, and etching on ...

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Problems solved by technology

[0004] In the above process, the size of Fin is determined by the above process steps such as photolithography (exposure dose, etc.) In the stage of research and development or production, it is relatively difficult to control

If the process steps such as lithography and etching fluctuate, the size of Fin will be directly affected. If the impact occurs after lithography, the photoresist needs to be removed and re-exposed. If the impact occurs after etching , then the product needs to be scrapped. Therefore, the above-mentioned method of modifying or controlling the size of Fin is too inefficient and may cause waste

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