Pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime

Abstract

The present invention relates to a pulse generation device and method with high repetition frequency, high voltage and subnanosecond risetime. The pulse generation device comprises a multistage step-like pulse forming line; an input of the multistage step-like pulse forming line is provided in parallel with at least two semi-insulating gallium arsenide cryosars, which are temporally conducted in succession; in service, the semi-insulating gallium arsenide cryosars are conducted through triggering by optical pulses; and each cryosar works in a fixed repetition frequency. Each of the semi-insulating gallium arsenide cryosars connected in parallel is temporally conducted in succession. If the time interval is equal to a working period of a single cryosar dividing by a number of the cryosars, the pulse generation device and method based on semi-insulating gallium arsenide cryosars in the present invention is able to realize pulse output with high repetition frequency, high output voltage and subnanosecond risetime.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and in particular relates to a high repetition frequency, high voltage, and sub-nanosecond frontier (<1 ns) pulse generating device. Background technique [0002] High repetition rate and high voltage pulses with sub-nanosecond frontiers are widely used in civil and military fields. They generate high-voltage pulsed electric fields, which can be applied to biomedicine, sewage and waste gas treatment, food preservation, plasma chemistry, etc.; through antenna radiation After that, an ultra-wide-spectrum short electromagnetic pulse is generated, which can be applied to target detection, three-dimensional imaging, interference or damage to military electronic equipment, etc. [0003] refer to figure 1 . Document 1 "1995, Proc. SPIE, Optically Activated Switching IV, Vol. 2343, pp. 180-186" introduced a bipolar pulse generating device based on a semi-insulating gallium arsenide photoconducti...

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Problems solved by technology

[0008] In order to solve the technical problem that the existing bipolar pulse generating device has limited repetition frequency and cannot realize high repetition frequency, high output voltage and sub-nanosecond pulse leading edge at the same time, the present invention provides a high repetition frequency, high voltage, sub-nanosecond pulse leading edge pulse generator

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