High repetition rate, high voltage, sub-nanosecond frontier pulse generation device and method
A high repetition frequency, high voltage technology, applied in pulse generation, pulse technology, electrical components, etc., can solve the problem of the limited repetition frequency of bipolar pulse generators, and the inability to achieve high repetition frequency, high output voltage and sub-nanosecond pulses at the same time. Frontier and other issues, to achieve the effect of simple structure and increased repetition frequency
Active Publication Date: 2018-06-19
NORTHWEST INST OF NUCLEAR TECH
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[0008] In order to solve the technical problem that the existing bipolar pulse generating device has limited repetition frequency and cannot realize high repetition frequency, high output voltage and sub-nanosecond pulse leading edge at the same time, the present invention provides a high repetition frequency, high voltage, sub-nanosecond pulse leading edge pulse generator
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[0030] The high repetition frequency, high voltage, and sub-nanosecond leading-edge pulse generating device of the present invention includes a multi-level stepped pulse forming line, at least two semi-insulated gallium arsenide avalanche switches are arranged in parallel at the input end of the multi-level stepped pulse forming line. The semi-insulating GaAs avalanche switch can be in the form of the same planar structure, heteroplanar structure and bulk structure. The circuit of the pulse generating device is a two-stage stepped pulse forming line, and may also be in the form of a pulse generating circuit of other capacitors or transmission lines. When working, the semi-insulating GaAs avalanche switches are turned on by light pulses, and each switch works at a fixed repetition frequency. The semi-insulating GaAs avalanche switches connected in parallel are sequentially turned on in time. If the time interval is the working time period of a single switch divided by the numb...
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The present invention relates to a high repetition frequency, high voltage, sub-nanosecond pulse generating device and method. The pulse generating device includes a multi-level stepped pulse forming line, and at least two input terminals of the multi-level stepped pulse forming line are arranged in parallel. Semi-insulating GaAs avalanche switches, each semi-insulating GaAs avalanche switch is turned on sequentially in time; when working, the semi-insulating GaAs avalanche switch is triggered by light pulses, and each switch works at a fixed repetition rate . The semi-insulating GaAs avalanche switches connected in parallel are sequentially turned on in time. If the time interval is the time period of a single switch divided by the number of switches, the pulse generation device and method based on the semi-insulating gallium arsenide avalanche switch of the present invention can realize pulses with high repetition rate, high output voltage and sub-nanosecond pulse front output.
Description
technical field [0001] The invention belongs to the technical field of pulse power, and in particular relates to a high repetition frequency, high voltage, and sub-nanosecond frontier (<1 ns) pulse generating device. Background technique [0002] High repetition rate and high voltage pulses with sub-nanosecond frontiers are widely used in civil and military fields. They generate high-voltage pulsed electric fields, which can be applied to biomedicine, sewage and waste gas treatment, food preservation, plasma chemistry, etc.; through antenna radiation After that, an ultra-wide-spectrum short electromagnetic pulse is generated, which can be applied to target detection, three-dimensional imaging, interference or damage to military electronic equipment, etc. [0003] refer to figure 1 . Document 1 "1995, Proc. SPIE, Optically Activated Switching IV, Vol. 2343, pp. 180-186" introduced a bipolar pulse generating device based on a semi-insulating gallium arsenide photoconducti...
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IPC IPC(8): H03K4/02
Inventor 胡龙苏建仓丁臻捷浩庆松袁雪林方旭樊亚军
Owner NORTHWEST INST OF NUCLEAR TECH