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Anodic oxidation technology used for aluminum alloy base material of TFT liquid crystal glass panel

An aluminum alloy-based, anodizing technology, applied in the direction of anodizing, surface reaction electrolytic coating, coating, etc., to improve the breakdown voltage resistance and corrosion resistance, avoid the reduction of breakdown voltage and corrosion resistance, The effect of improving heat resistance

Active Publication Date: 2016-03-16
安徽富乐德科技发展股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technology currently used can meet the customer's requirements in terms of insulation and corrosion resistance, but the service life needs to be further improved. It is hoped that the service life will be extended from 2.5 months to 4 months.

Method used

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  • Anodic oxidation technology used for aluminum alloy base material of TFT liquid crystal glass panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] S1. Degreasing: Put the aluminum alloy substrate into the degreasing agent T-200 with a concentration of 40g / L, at a temperature of 60°C, and take it out after degreasing and cleaning for 8 minutes;

[0027] S2. Alkali etching: put the aluminum alloy substrate into NaOH solution with a concentration of 100g / L, and wash with alkali at 50°C for 30S;

[0028] S3, deashing: putting the aluminum alloy substrate into HNO with a concentration of 30% (weight ratio) 3 In the solution, remove ash at room temperature for 40S;

[0029] S4, the first water washing: wash the aluminum alloy substrate repeatedly with water, take it out after rinsing for 20 seconds;

[0030] S5. Sulfuric acid anodic oxidation: use graphite plate as cathode, put the aluminum alloy base material into an oxidation tank containing 160g / L sulfuric acid solution prepared with 98wt% concentrated sulfuric acid as anode, control the temperature at 0°C, turn on the power, and the current Density 2.5A / dm 2 , th...

Embodiment 2

[0037] S1. Degreasing: Put the aluminum alloy base material into the degreasing agent T-200 with a concentration of 30g / L, at a temperature of 65°C, and take it out after degreasing and cleaning for 6 minutes;

[0038] S2. Alkali etching: put the aluminum alloy substrate into NaOH solution with a concentration of 90g / L, and wash with alkali at 55°C for 40S;

[0039] S3, deashing: putting the aluminum alloy base material into HNO with a concentration of 40% (weight ratio) 3 Solution, deash at room temperature for 30S;

[0040] S4, the first water washing: wash the aluminum alloy substrate repeatedly with water, take it out after rinsing for 20 seconds;

[0041] S5. Sulfuric acid anodic oxidation: use a graphite plate as the cathode, put the aluminum alloy substrate into an oxidation tank containing 180g / L sulfuric acid solution configured with 98wt% concentrated sulfuric acid as the anode, control the temperature at -2°C, turn on the power, Current density 2.0A / dm 2 , the re...

Embodiment 3

[0048] S1. Degreasing: put the aluminum alloy substrate into the degreasing agent T-200 with a concentration of 50g / L at a temperature of 55°C, and take it out after degreasing and cleaning for 10 minutes;

[0049] S2. Alkali etching: Put the aluminum alloy substrate into NaOH solution with a concentration of 110g / L, and wash with alkali at 45°C for 20S;

[0050] S3, deashing: putting the aluminum alloy substrate into HNO with a concentration of 25% (weight ratio) 3 In the solution, remove ash at room temperature for 60S;

[0051] S4, the first water washing: wash the aluminum alloy substrate repeatedly with water, take it out after rinsing for 20 seconds;

[0052] S5. Sulfuric acid anodic oxidation: use graphite plate as cathode, put aluminum alloy base material into an oxidation tank containing 150g / L sulfuric acid solution prepared with 98wt% concentrated sulfuric acid as anode, control the temperature at 2°C, turn on the power, and the current Density 3.0A / dm 2 , the re...

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Abstract

The invention relates to an anodic oxidation technology used for an aluminum alloy base material of TFT equipment. The anodic oxidation technology comprises a plurality of working procedures as follows: degreasing, alkaline etching, ash removing, first washing, sulfuric acid anodic oxidation, second washing, oxalic acid anodic oxidation, third washing, hole sealing, blow-drying and the like. Oxidizing temperature is controlled to be close to 0 DEG C by adjustment of technological conditions of sulfuric acid oxidation, meanwhile, current density is increased to 2.0 A / d m<2>-3.0 A / d m<2>, heat change resistance of the product can be improved effectively, and the circumstance that breakdown voltage resistance and corrosion resistance are reduced due to heat change in a using process of the product can be avoided; and after sulfuric acid hard anodizing, oxalic acid oxidation is carried out, and breakdown voltage resistance and corrosion resistance of the product can be improved effectively.

Description

technical field [0001] The invention belongs to the technical field of an aluminum alloy surface treatment process for TFT equipment, and in particular relates to an anodic oxidation process for an aluminum alloy base material of a TFT equipment. Background technique [0002] As the market demand for ThinFilm Transistor-Liquid Crystal Display in China continues to expand, major panel makers have expanded their production lines for TFT LCD panels such as Gen 6 and Gen 8.5. Simultaneously, the supporting demand for TFT LCD glass panels and components has also increased rapidly. [0003] As far as we know, the aluminum alloy parts such as the upper electrode plate and the inner wall plate matching the electrode plate need to release arcs in the process of making the liquid crystal panel, so the surface of the aluminum alloy parts is required to have insulation and corrosion resistance; in order to extend The service life of equipment and parts is synchronized to ensure the stab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/12C25D11/16C25D11/08C25D11/10C25D11/18
CPCC25D11/08C25D11/10C25D11/12C25D11/16C25D11/18
Inventor 高小彬贺贤汉
Owner 安徽富乐德科技发展股份有限公司