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Method for improving merging quantity of N in GaAsN epitaxial thin film and reducing generation of interstitial defect

An epitaxial thin film and epitaxial growth technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as small incorporation of N

Inactive Publication Date: 2016-03-16
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The key of the present invention is to solve the problem that the incorporation amount of N is small and there are a large number of interstitial defect states in the growth process of GaAsN material

Method used

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  • Method for improving merging quantity of N in GaAsN epitaxial thin film and reducing generation of interstitial defect
  • Method for improving merging quantity of N in GaAsN epitaxial thin film and reducing generation of interstitial defect
  • Method for improving merging quantity of N in GaAsN epitaxial thin film and reducing generation of interstitial defect

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Experimental program
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Effect test

Embodiment 1

[0017] The metal organic chemical vapor deposition (MOCVD) method is used to grow GaAsN materials. The specific process and steps are as follows:

[0018] (1) Select (n11) BGaAs material as the substrate. Such as figure 1 As shown, the (n11)B crystal plane is rich in the V site of the triple bond, which is conducive to the incorporation of N; while the (n11)A crystal plane is rich in the III site of the triple bond, which hardly contributes to the incorporation of N. And with the selection of "n" in the (n11) crystal plane, the composition ratio of the (111) and (100) crystal planes on the epitaxial plane changes. For the (n11)B crystal planes with different orientations, the triple bond The density of the active sites is also changing, and the higher the density of the triple bond active sites, the more favorable the incorporation of N. Take (311) BGaAs substrate as an example to illustrate.

[0019] (2) Put the (311) BGaAsn type conductive substrate into the metal organic...

Embodiment 2

[0021] Using molecular beam epitaxy (MBE) to grow GaAsN materials, the specific process and steps are as follows:

[0022] (1) The (n11)B-oriented GaAs material is selected as the substrate, and the (311)BGaAs substrate is taken as an example for illustration.

[0023] (2) Put the (311) BGaAsn type conductive substrate into the molecular beam epitaxy (MBE) growth chamber, and also place the (311) A and (100) GaAs substrates for lateral comparison to epitaxially grow the GaAsN material. In the epitaxial process, solid Ga, solid As and radio frequency plasma N sources were used as Ga source, As source and N source respectively. The power of radio frequency plasma N source was controlled at 175W, the flow rate was controlled at 0.5 sccm, and the growth temperature was controlled at 400-480°C to epitaxially grow GaAsN material.

Embodiment 3

[0025] Using chemical beam epitaxy (CBE) to grow GaAsN materials, the specific process and steps are as follows:

[0026] (1) The (n11) BGaAs material is also selected as the substrate, and the (311) BGaAs substrate is taken as an example for illustration.

[0027] (2) Put the (311) BGaAsn type conductive substrate into the chemical beam epitaxy (CBE) equipment, and also place the (311) A and (100) GaAs substrates for lateral comparison, and epitaxially grow GaAsN materials on the GaAs substrate . During epitaxy, triethylgallium (TEGa), tris(dimethylamino)arsenic (TDMAAs), monomethylhydrazine (MMHy) and silane (SiH 4 ) as Ga source, As source, N source and Si source (dopant) respectively. The flow rates of TEGa and TDMAAs were controlled at 0.1 and 1.0 sccm, respectively, and the flow rate of Si source was controlled at 0.4 sccm. The flow rate of the N source is controlled at 0, 4, 6 and 9 sccm respectively. By increasing the flow rate of the N source, the incorporation amo...

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Abstract

The invention relates to a method for improving a merging quantity of N in a GaAsN epitaxial thin film and reducing generation of an interstitial defect. The method utilizes an epitaxial growth technology to change conventional [100] epitaxial orientation into [n11] orientation, so that the merging quantity of N in GaAs can be effectively improved and generation of the interstitial defect can be reduced. According to the method, a (n11)B GaAs material with a high-density surface triple-bond active site is used as a substrate for epitaxially growing a GaAsN material. According to the method, a high-density triple-bond V site (i.e. an N or As site) can be formed by utilizing an (n11) B polar face (i.e. an As face), and the characteristic of high electronegativity of N is combined to construct an active adsorption site of N, so that the merging quantity of N in GaAsN can be effectively improved, generation of the interstitial defect can be reduced and the high-quality GaAsN thin film can be obtained.

Description

technical field [0001] The invention relates to a method for increasing the incorporation of N in a GaAsN epitaxial film and reducing the generation of gap defects by changing the orientation and polarity of a substrate, and belongs to the technical field of growth of semiconductor ternary compound film materials. Background technique [0002] In recent years, GaAsN materials have attracted more and more attention from researchers because of their unique physical properties and potential application value. Due to the large difference in electronegativity and atomic size between N atoms and As atoms, the GaAsN material system exhibits unique energy band characteristics: with the incorporation of N, the band gap of GaAsN does not increase but decreases rapidly. This energy band characteristic makes GaAsN materials have unique advantages in device applications such as long-wavelength lasers and high-efficiency multi-junction solar cells. For example, SolarJunction of the Unite...

Claims

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Application Information

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IPC IPC(8): H01L21/322
CPCH01L21/3228
Inventor 韩修训董琛
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI