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Device and method for detecting N-type silicon on edge of polysilicon wafer

A detection device, polysilicon technology, applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of large instrument operation test errors, inability to ensure PN removal at the edge of silicon wafers, uneconomical test operations, etc. Achieve the effect of simple components

Inactive Publication Date: 2016-03-16
SHANGHAI ALEX NEW ENERGY
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  • Summary
  • Abstract
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Problems solved by technology

Both methods have the following problems (1) It is impossible to detect whether the edge single-point PN junction is removed (2) The instrument operation test error is relatively large (3) The fragmentation rate of personnel operation is high (4) The maintenance cost of the instrument is relatively high, the existence of the above problems The removal of PN at the edge of the silicon wafer cannot be guaranteed, and the test operation is uneconomical

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  • Device and method for detecting N-type silicon on edge of polysilicon wafer

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Embodiment Construction

[0013] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0014] Such as figure 1 The N-type silicon detection device at the edge of the polycrystalline silicon wafer of the present invention includes an operating platform 100, a multimeter 200, a multimeter fixed bracket 300, a red copper sheet 400 and a red copper sheet support frame 500; the multimeter fixed bracket 300 and the red copper sheet support frame 500 are set On the operating platform 100, the multimeter 200 is fixed on the multimeter fixing bracket 300, the copper sheet 400 is placed flat on the copper sheet support frame 500, and the silicon wafer 600 to be tested is placed flat on the copper sheet 400; the operating platform 100 is also provided with a A silicon wafer storage box 700 for placing the silicon wafer to be tested.

[0015] The method for detecting N-type silicon o...

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Abstract

The invention discloses a device and a method for detecting N-type silicon on the edge of a polysilicon wafer. The device comprises an operation platform, a universal meter, a universal meter fixing bracket, a red copper sheet and a red copper sheet support frame, wherein the universal meter fixing bracket and the red copper sheet support frame are arranged on the operation platform; the universal meter is fixed on the universal meter fixing bracket; and the red copper sheet is flatly put on the red copper sheet support frame. According to a detection technology disclosed by the invention, components are simple; and maintenance and repair are not needed basically. A resistance value from the front surface of the wafer to any point on the edge can be detected through the detection method, so that the problems of the stability of an etching process, the smoothness of idler wheels and a bracket of a machine and operations of the staff can be judged by easily detecting the removal condition of the N-type silicon on the edge of the polysilicon wafer.

Description

technical field [0001] The invention relates to a polysilicon detection technology, in particular to a detection of whether N-type silicon at the edge of a polysilicon wafer is completely corroded. Background technique [0002] At present, the polysilicon cell etching process is divided into two methods, one is mixed acid etching, and the other is plasma bombardment. Both methods are used to remove the N-type silicon formed by the phosphorus contacting the four sides of the silicon wafer during the diffusion process. , if the removal is not complete, the photogenerated electrons collected by the PN junction on the front of the cell will flow to the back of the PN junction along the edge diffused area and cause a short circuit. This short-circuit channel is equivalent to reducing the parallel resistance; in order to avoid the short-circuit of the PN junction at the edge of the silicon chip, which will reduce the parallel resistance of the finished battery and affect the effic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/14
Inventor 孟利萍张锐
Owner SHANGHAI ALEX NEW ENERGY
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