Method for forming active region and semiconductor device

An active area and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of no solution, low bonding force between the isolation dielectric layer and the shallow trench, and the inability to increase the effective trench of the active device. channel width and other issues, to achieve the effect of increasing the effective channel width, improving the bonding force is not high, and improving the isolation effect

CN105448820BActive Publication Date: 2018-07-20SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-07-20

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Abstract

The invention provides an active region forming method and a semiconductor device. The active region forming method comprises the steps of: forming a base body structure, wherein the base body structure comprises a substrate in which shallow trenches are formed, preparation active regions formed in the substrate between the adjacent shallow trenches as well as a mask layer formed on the surface of the substrate, and through holes which correspond to the shallow trenches in position and are wider than the shallow trenches are formed in the mask layer; forming a first isolation medium layer, of which the upper surface is lower than the upper surface of the substrate, in each shallow trench; removing corners on two sides of each preparation active region via etching along the corresponding through hole; carrying out oxidation treatment on the preparation active regions along the through holes to form active regions with fillet parts; and forming second isolation medium layers connected with the first isolation medium layers in the through holes. The active region forming method can be used for forming the active regions with circular corners, thereby increasing the effective channel width of active devices in the active regions, and increasing operating current of the active devices.
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Description

technical field

[0001] The invention relates to a manufacturing process of a semiconductor integrated circuit, in particular to a method for forming an active region and a semiconductor device. Background technique

[0002] In the manufacturing process of semiconductor devices, it is necessary to define the position of the active region in the substrate, and then form active devices such as transistors in the active region. When the active device is in the working state, a conductive channel is formed in the active region, and as the length of the conductive channel decreases or the width of the conductive channel increases, the operating current of the active device increases accordingly. At present, shallow trench isolation technology (Shallow Trench Isolation, STI) is usually used to define the position of the active region, that is, a trench isolation structure is formed in the substrate, and the substrate between adjacent trench isolation structures is used as the activ...

Examples

Embodiment Construction

[0031] The technical scheme of the present application will be described in detail below in conjunction with the specific implementation of the present application, but the following examples are only used to understand the present application, and cannot limit the present application. The embodiments in the present application and the features in the embodiments Combinable with each other, the application can be implemented in many different ways as defined and covered by the claims.

[0032] It can be seen from the background art that the active region formed by the existing method has nearly right-angled corners, so that the effective channel width of the active device cannot be increased, and the operating current of the active device cannot be increased. The inventors of the present application conducted research on the above problems and proposed a method for forming an active region. Such as Figure 5 As shown, the method includes the following steps: forming a base st...