Quantum dot light-emitting device and preparation method of quantum dot light-emitting device

Abstract

The invention provides a quantum dot light-emitting device and a preparation method of the quantum dot light-emitting device. The quantum dot light-emitting device comprises an anode, a hole injection layer, a quantum dot light-emitting functional layer, an electron injection layer and a cathode. The anode and the cathode are arranged in an opposite and spacing way. The anode provides holes, and the cathode provides electrons. The hole injection layer, the quantum dot light-emitting functional layer and the electron injection layer are clamped between the anode and the cathode. One surface of the hole injection layer is connected with the anode. One surface, which is away from the quantum dot light-emitting functional layer, of the electron injection layer is connected with the cathode. The holes are injected into the quantum dot light-emitting functional layer by the hole injection layer. The electrons are injected into the quantum dot light-emitting functional layer by the electron injection layer. The quantum dot light-emitting functional layer is a material layer composed of organic hole transmission material, organic electron transmission material, quantum dot material and an organic solvent. The holes are transmitted to the quantum dot material by the organic hole transmission material. The electrons are transmitted to the quantum dot material by the organic electron transmission material. The holes and the electrons are composite in the quantum dot material so as to emit light.

Description

Technical field [0001] The invention relates to the field of display, in particular to a quantum dot light-emitting device and a preparation method of the quantum dot light-emitting device. Background technique [0002] Quantum dot light-emitting devices, such as Quantumdot Light Emitting Diode (QLED), are known as the next generation of lighting after organic light-emitting devices because of their wide color gamut, high color purity, good stability, low power consumption, and low cost. Device. The quantum dot light-emitting diode includes a quantum dot light-emitting layer, a hole transport layer and an electron transport layer. The electron transport layer, the quantum dot light-emitting layer and the hole transport layer are stacked in sequence. The electron transport layer, the quantum dot light-emitting layer and the hole transport layer usually dissolve the corresponding materials in an organic solvent, and then form a separate film by a wet method by spin coating. That...

AI Technical Summary

Problems solved by technology

Since organic solvents are used during film formation, during the preparation process of quantum dot light-emitting diodes, the film layer being produced will cause damage to the adjacent film layers that have been produced, resulting in a decrease in the luminous efficiency of quantum dot light-emitting diodes. Reduction and reduction of preparation success rate

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