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Nanometer Sn ball preparing method

A technology of nanometer and heat treatment equipment, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of low operating safety, poor luminous performance, high experimental cost, etc., to achieve high safety, Good luminous performance and simple operation

Active Publication Date: 2016-04-20
SHAANXI UNIV OF SCI & TECH
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Problems solved by technology

Organic phase preparation has high fluorescence quantum yield, narrow fluorescence half-peak width, good dispersion and stability; but there are many disadvantages such as strong reagent toxicity, high experimental cost, and low operation safety.
The aqueous phase preparation has the advantages of non-toxic reagents, low cost, and simple operation, but the luminescence performance is poor

Method used

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Embodiment Construction

[0022] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0023] 1) Substrate cleaning:

[0024] A 1-inch glass substrate was washed by brush, ultrasonically cleaned in absolute ethanol for 10 minutes, and ultrasonically cleaned in pure water for 10 minutes, and then set aside. Brushing is mainly used to clean the particles on the surface of the substrate. Ultrasonic cleaning in absolute ethanol is mainly used to clean the organic matter on the surface of the substrate. Ultrasonic cleaning in pure water is used to clean the residual ethanol on the surface of the substrate. Cleaning is beneficial to the spreading of rosin on the glass surface. A uniform and smooth film can be obtained;

[0025] 2) Coating of rosin:

[0026] heating the rosin to soften it, and then coating a layer of rosin 2 on the surface of the glass substrate 1 with a thickness of 1 μm by printing;

[0027] 3) Preparation of Sn film:

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Abstract

The invention provides a nanometer Sn ball preparing method. The method comprises the steps of 1, coating a substrate with a layer of rosin; 2, preparing a Sn film on the rosin to obtain a sample wafer, and conducting heat treatment on the sample wafer in a heat treatment device to enable the Sn film to become a plurality of nanometer Sn balls scattered on the rosin; 3, placing the sample wafer subjected to heat treatment in absolute ethyl alcohol, and melting the rosin by means of absolute ethyl alcohol to enable the nanometer Sn balls to be separated from the substrate; 4, cleaning the nanometer Sn balls with absolute ethyl alcohol. The prepared nanometer Sn balls have high luminescence property and can serve as quantum dots. Solid is taken as the raw material, the diameter of the nanometer Sn balls depends on the thickness of the Sn film, the adopted reagent is cheap and nontoxic, and therefore the preparing method has the advantages that operation is easy and safety performance is high.

Description

technical field [0001] The invention belongs to the display field, and in particular relates to a preparation method of nanometer Sn (tin) balls for quantum dots. Background technique [0002] Quantum dots are composed of a limited number of atoms, and the three dimensions are all on the order of nanometers. Quantum dots are generally spherical or quasi-spherical, and are nanoparticles made of semiconductor materials with a stable diameter of 2 to 20 nm. As a novel semiconductor nanomaterial, quantum dots have many unique nanoscale properties. [0003] At present, there are two main ways to prepare quantum dots: organic phase preparation and aqueous phase preparation. Organic phase preparation has high fluorescence quantum yield, narrow fluorescence half-peak width, good dispersion and stability; but there are many disadvantages such as strong reagent toxicity, high experimental cost, and low operation safety. The aqueous phase preparation has the advantages of non-toxic ...

Claims

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Application Information

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IPC IPC(8): C23C14/20C23C14/24C23C14/34C23C14/58B82Y30/00
CPCB82Y30/00C23C14/20C23C14/24C23C14/34C23C14/5806C23C14/5873
Inventor 张麦丽张方辉牟强
Owner SHAANXI UNIV OF SCI & TECH
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