CuInSe2 ultra-small quantum dot as well as preparation method and application thereof

A technology of quantum dots and ions, which is applied in the field of water-soluble CuInSe2 quantum dots and its aqueous phase synthesis, to achieve the effects of easy control of process parameters, narrow size distribution, and good luminous performance

Pending Publication Date: 2021-01-19
GUILIN UNIV OF ELECTRONIC TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For small molecule thiocyanate or thiol-coated CuInSe 2 Direct aqueous solution synthesis technology of quantum dots

Method used

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  • CuInSe2 ultra-small quantum dot as well as preparation method and application thereof
  • CuInSe2 ultra-small quantum dot as well as preparation method and application thereof
  • CuInSe2 ultra-small quantum dot as well as preparation method and application thereof

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Example Embodiment

[0041] CuInSe 2 The preparation method of ultra-small quantum dots, described method is prepared in aqueous phase, comprises the steps:

[0042] S1: Preparation of thiocyanic acid or thiol-coordinated Cu and In ion precursor solutions and selenium precursor solutions:

[0043] Preparation of Cu and In ion precursor solution: Dissolve copper salt and indium salt in water according to the proportion, add small molecule thiocyanic acid or mercapto encapsulant and stir to obtain white precipitate, add OH - Until the precipitate dissolves and adjust the pH value of the solution to 7-12;

[0044] Wherein, the molar ratio of copper salt and indium salt is 1:1~1:10, and described copper salt is selected from any one in CuI, CuCl, CuBr, Cu(OAc) or CuSCN; Indium salt is selected from In (OAc) 3 , InCl 3 , InBr 3 , InI 3 , In(NO 3 ) 3 or In 2 (SO 4 ) 2 Any one of them; the molar ratio of the small molecule thiocyanate encapsulating agent to the copper salt is 1:6~1:60, and the...

Example Embodiment

[0051] Example 1

[0052] The preparation method of the ultra-small CuInSe2 quantum dot wrapped by thiocyanate is as follows:

[0053] S1: Preparation of 1:1 precursor solution of Cu and In ions coordinated by thiocyanate: 0.004g Cu(Ac) 2 and 0.006g In(Ac) 3 Dissolve in 10mL H 2 O, 0.0462g of trimeric thiocyanic acid was added thereto, and stirred to obtain a white precipitate. NaOH was added to the precipitate to adjust the pH of the solution to 7-10. It is 2mmol / L that obtains copper ion concentration, and the metal complex precursor solution that indium ion concentration is 2mmol / L.

[0054] S2: One-pot method to prepare ultra-small CuInSe coated with thiocyanuric acid 2 Quantum dot aqueous solution: Weigh 0.016g of selenium powder, dissolve it in 1mL of hydrazine hydrate, and prepare Se 2- Selenium precursor solutions such as hydrogen selenide with a concentration of 1mol / L,

[0055] S3: Mix the solution with the above-mentioned metal complex precursor solution unde...

Example Embodiment

[0058] Example 2

[0059] Ultra-small CuInSe coated with thiocyanate 2 The preparation method of quantum dots is as follows:

[0060] S1: Preparation of 1:10 precursor solution of Cu and In ions coordinated by thiocyanate: 0.004 g Cu(Ac) 2 and 0.06g In(Ac) 3 Dissolve in 10mL H 2 O, 0.0462g of trimeric thiocyanic acid was added thereto, and stirred to obtain a white precipitate. NaOH was added to the precipitate to adjust the pH of the solution to 7-10. It is 2mmol / L that obtains copper ion concentration, and the metal complex precursor solution that indium ion concentration is 20mmol / L.

[0061] S2: One-pot method to prepare ultra-small CuInSe coated with thiocyanuric acid 2 Quantum dot aqueous solution: weigh 0.016g selenium powder, dissolve in 1mL hydrazine hydrate,

[0062] S3: Mix the solution with the above-mentioned metal complex precursor solution under stirring and put it into a hydrothermal kettle to grow at 90-170°C for 1-60 hours to obtain ultra-small CuInSe ...

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Abstract

The invention discloses a CuInSe2 ultra-small quantum dot as well as a preparation method and application thereof. The preparation method comprises the following steps: S1, preparing a trithiocyanuricacid or sulfydryl coordinated Cu and In ion precursor solution and a selenium precursor solution; preparing a CuInSe2 quantum dot precursor solution; preparing a micromolecular thiocyanate or sulfydryl coated ultra-small CuInSe2 quantum dot aqueous solution, preparing a target product in the aqueous solution by adopting an aqueous-phase one-pot method at a relatively simple process and a relatively low temperature, coating the obtained CuInSe2 quantum dot cubic-phase ultra-small nanocrystal with micromolecular thiocyanate or sulfydryl, and carrying out near-infrared luminescence. After the quantum dot ink is printed, a stable quantum dot light-emitting layer can be obtained, and the quantum dot ink has long service life and good light-emitting performance. When the quantum dot ink is usedfor printing and preparing a solar cell, the optical performance and the electrical performance of the cell can be effectively improved, and quantum dots have excellent photocatalytic performance.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, and relates to a CuInSe 2 Ultra-small quantum dots and their preparation methods and applications, specifically a water-soluble CuInSe 2 Quantum dots and their preparation methods and applications in aqueous phase synthesis. Background technique [0002] CuInSe 2 It is a group I-III-VI direct bandgap semiconductor material with a room temperature gap of about 1.05eV. It has a high molar extinction coefficient and intrinsic dipole moment in the visible light region, which facilitates the rapid separation of electrons and holes. For example, the emission wavelength is continuously adjustable, the emission wavelength is narrow, the absorption spectrum is wide, the luminescence intensity is high, the fluorescence lifetime is long, and the biocompatibility is good, etc.; because it does not contain toxic Cd, Pb and other highly toxic heavy metal elements, it is used in light-emitting diodes (L...

Claims

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Application Information

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IPC IPC(8): C09K11/88B82Y20/00B82Y40/00C01B19/00C09D11/50B01J27/057C01B3/04H01L31/0272H01L31/0352
CPCC09K11/881B82Y20/00B82Y40/00C01B19/002C09D11/50B01J27/0573B01J35/004B01J35/0013C01B3/042H01L31/0272H01L31/035218C01P2004/64C01P2002/72C01P2002/85C01P2004/04C01P2002/84C01P2006/60Y02E60/36
Inventor 薛小刚瞿森林袁欣李钰张小文袁昌来
Owner GUILIN UNIV OF ELECTRONIC TECH
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