GaN-base LED vertical chip structure and manufacture method thereof

Abstract

The invention provides a GaN-base LED vertical chip structure and a manufacture method thereof. This structure comprises a bonding substrate; an etching barrier layer connected to the surface of the bonding substrate in correspondence with a cutting channel area; a P electrode bonded to the bonding substrate; a luminescent epitaxial structure connected to the P electrode and comprising a P-GaN layer, a quantum well layer and an N-GaN layer stacked in succession, wherein the luminescent epitaxial structure is divided by the cutting channel area into luminescent epitaxial top structures; and an N electrode formed on the surface of the N-GaN layer. The invention discloses a device structure enabling an improvement in vertical chip reliability and a manufacture method thereof, a SiO2 etching barrier layer is grown on the cutting channel area, thereby solving the problem that when ICP deep etching is used on an MESA top after peeling, metal debris spatters from the cutting channel area to the sidewall of a chip, causing electric leakage. The device structure is finished just by photo-etching using a single negative photoresist, the manufacture process is simple, the cost is low, and the device structure is suitable for batch production.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting manufacturing, in particular to a GaN-based LED vertical chip structure and a preparation method thereof. Background technique [0002] In terms of the structure of LEDs, GaN-based LEDs can be divided into front-mounted structures, flip-chip structures, and vertical structures. There are two obvious disadvantages of the front-mounted structure LED. First, the p- and n-electrodes of the front-mounted LED are on the same side of the LED. The thermal conductivity of the sapphire substrate is poor, which seriously hinders the dissipation of heat. In order to solve the heat dissipation problem, the American Lumileds Lighting Company invented flip chip (Flipchip) technology. further increase the driving current. [0003] Compared with the traditional GaN-based LED front-mounted structure, the vertical structure has the advantages of good heat dissipation, high current carrying capacity, high lum...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a GaN-based LED vertical chip structure and its preparation method, which is used to solve the problem of chip leakage caused by electrode metal splashing to the side wall of the chip in the prior art, thereby affecting the chip. question of reliability

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