Gas guide ring, gas supply device and plasma processing device

Abstract

The invention discloses a gas guide ring, which is used for inputting multiple reaction gases into a plasma reaction cavity. The gas guide ring includes an annular main body, a plurality of annular gas passages embedded in the annular main body corresponding to multiple reaction gases, and a plurality of groups of gas injection holes correspondingly connected to the plurality of annular gas passages and not interfering with each other . The air inlet of each air injection hole in each group of air injection holes is connected with the output end of the corresponding annular gas channel, and the air outlet is formed on the inner side wall of the annular body. Wherein, the gas ejection directions of at least two groups of gas injection holes are set to be different. The invention can reflect the gas field distribution of the gas, thereby improving the uniformity of plasma treatment.

Description

technical field [0001] The invention relates to semiconductor processing equipment, in particular to a gas guide ring, a gas supply device and a plasma processing device with the gas guide ring. Background technique [0002] In recent years, with the development of semiconductor manufacturing processes, the requirements for the integration and performance of components are getting higher and higher. Plasma Technology (Plasma Technology) is widely used in many semiconductor processes by exciting the plasma formed by reactive gases, such as In the deposition process (such as chemical vapor deposition), etching process (such as dry etching), it is playing a pivotal role in the field of semiconductor manufacturing. Generally speaking, in a plasma processing device, the plasma is generally formed by radio frequency excitation of the reactive gas discharged from the top of the reaction chamber, and then the plasma is bombarded on the wafer on the chuck by the bias voltage of the e...

AI Technical Summary

Problems solved by technology

[0005] However, due to the influence of the introduction of the reaction gas in the reaction chamber 2 or the uneven distribution of the plasma, different regions on the surface of the semiconductor wafer often have different processing rates; for different regions distributed along the radial direction of the wafer, such as the central region And the edge area, this uneven treatment is especially obvious, which leads to different performances of semiconductor devices formed in different areas on the wafer, which has a great impact on the process control and product yield of semiconductor device manufacturing

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