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Glass powder for wrapping electronic chip and preparation method thereof

A technology of electronic chips and glass powder, which is applied in the field of electronics industry, can solve the problems of high cost, poor moisture-proof effect, and low cost, and achieve the effects of low preparation cost, excellent physical and chemical properties, and good particle size

Inactive Publication Date: 2016-05-04
JIANGSU JIANDAEN ELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cost of the first two methods is low, but the moisture-proof effect is not good; the latter method is good in moisture-proof effect, but the cost is high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Weigh 11.77kg of raw materials in total, among which ZnO, H 3 B0 3 , SiO 2 , PbO, CeO 2 , Sb 2 o 3 , Bi 2 o 3 They are 6.29kg, 4.06kg, 1.01kg, 0.29kg, 0.07kg, 0.04kg, 0.01kg respectively, and the calculated percentages of each raw material are 62.92% for ZnO, 62.92% for H 3 B0 3 40.59%, SiO 2 10.14%, PbO 2.89%, CeO 2 0.7%, Sb 2 o 3 is 0.40%, Bi 2 o 3 0.10%, the above-mentioned raw materials are mixed and stirred by a drum method, and the uniformly mixed batch is placed in a Pt container, heated in a high-temperature heating furnace for 4-5 hours to 1250 ° C, and kept for 2 hours, and melted Pour the molten glass into pure water and crush it. After cooling, use the drying method and dry it at 120°C for 1 hour to obtain the primary product. The primary product is coarsely crushed by the roller method, and the coarse powder obtained after crushing for 0.5 hours is The powder is ground by jet milling method to obtain a fine powder with particle size meeting th...

Embodiment 2

[0031] Weigh 11.86kg of raw materials in total, among which ZnO, H 3 B0 3 , SiO 2 , PbO, CeO 2 , Sb 2 o 3 , Bi 2 o 3 They are 6.15kg, 4.26kg, 1.02kg, 0.30kg, 0.08kg, 0.04kg, 0.01kg respectively, and the calculated percentage content of each raw material is 61.53% for ZnO, 61.53% for H 3 B0 3 42.60%, SiO 2 10.22%, PbO 3.00%, CeO 2 0.75%, Sb 2 o 3 is 0.40%, Bi 2 o 30.12%, the above-mentioned raw materials are mixed and stirred by a drum method, and the uniformly mixed mixture is placed in a Pt container, heated in a high-temperature heating furnace for 4-5 hours to 1250 ° C, and kept for 2 hours, and melted Pour the molten glass into pure water and crush it. After cooling, use the drying method and dry it at 120°C for 1 hour to obtain the primary product. The primary product is coarsely crushed by the roller method, and the coarse powder obtained after crushing for 0.5 hours is The powder is ground by jet milling method to obtain a fine powder with particle size me...

Embodiment 3

[0033] Weigh 11.77kg of raw materials in total, among which ZnO, H 3 B0 3 , SiO 2 , PbO, CeO 2 , Sb 2 o 3 , Bi 2 o 3 They are 6.33kg, 4.06kg, 1.01kg, 0.29kg, 0.07kg, 0.04kg, 0.01kg respectively, and the calculated percentages of each raw material are 62.92% for ZnO, 62.92% for H 3 B0 3 40.59%, SiO 2 10.14%, PbO 2.89%, CeO 2 0.7%, Sb 2 o 3 is 0.40%, Bi 2 o 3 0.10%, the above-mentioned raw materials are mixed and stirred by a drum method, and the uniformly mixed ingredients are placed in a Pt container, heated in a high-temperature heating furnace for 4-5 hours to 1250 ° C, and kept for 2 hours, and melted Pour the molten glass into pure water and crush it. After cooling, use the drying method and dry it at 120°C for 1 hour to obtain the primary product. The primary product is coarsely crushed by the roller method, and the coarse powder obtained after crushing for 0.5 hours is The powder is ground by jet milling method to obtain a fine powder with particle size mee...

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Abstract

The invention discloses glass powder for wrapping an electronic chip and a preparation method thereof. The preparation method mainly comprises the following steps: mixing ZnO, H3B03, SiO2, PbO, CeO2, Sb2O3 and Bi2O3 serving as raw materials according to a certain proportion; smelting the raw materials at a smelting temperature of 1,000-1,500 DEG C for 4-5 hours to obtain liquid glass, and discharging; drying and grinding to obtain the glass powder. The preparation method is low in preparation cost, is rapid and is economical; a prepared glass powder sample has a good granularity, high chemical purity and superior physical and chemical properties, and has a wide application prospect on the aspect of wrapping of high-end chips with high performance and low power consumption.

Description

technical field [0001] The invention belongs to the field of electronics industry, and in particular relates to a glass powder for wrapping electronic chips and a preparation method thereof. Background technique [0002] Electronic glass powder is an indispensable main new material in the electronics industry. It can be used as a low-temperature glass sealing material for lasers and optoelectronic devices. It can be used for bonding and sealing Kovar, glass, ceramics, and copper-iron metal materials. The adhesion effect is good. It has high airtight performance and is an ideal sealing material. Since the electrical characteristics of electronic components are more sensitive to the surrounding environmental conditions, once damp, it will cause deterioration of insulation resistance, current catch, breakdown voltage, etc., which will affect the normal operation of electronic instruments or equipment, or even malfunction, resulting in equipment failure . Especially in the a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00
CPCC03C12/00
Inventor 汪正张建军
Owner JIANGSU JIANDAEN ELECTRONICS SCI & TECH
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