Test method for measuring low-energy proton single-event upset sensibility of nanoscale device

A single-particle flip, nano-device technology, used in electronic circuit testing and other directions, can solve problems such as elements that are not specifically described

Active Publication Date: 2016-05-04
CHINA ACADEMY OF SPACE TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The accepted patent "A Method for Device Proton Single Event Test Using Accelerator High-Energy Protons" has detailed regulations and methods for evaluating the single-event test procedures and methods caused by spac...

Method used

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  • Test method for measuring low-energy proton single-event upset sensibility of nanoscale device
  • Test method for measuring low-energy proton single-event upset sensibility of nanoscale device
  • Test method for measuring low-energy proton single-event upset sensibility of nanoscale device

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Experimental program
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Embodiment 1

[0075] 1. Test sample processing

[0076] The device is packaged in a metal-ceramic package, which is mechanically decapped. Expose the chip.

[0077] 2. Proton incident angle and direction selection

[0078] Such as image 3 As shown, protons are incident on the device surface at an incident angle of 55°, and the projection of the proton incident direction on the device surface is parallel to one side of the device surface, that is, θ is 0°. Obtain the single particle flip cross section for A1 as 1.3×10 -14 cm 2 / bit; still make the protons incident on the device surface at an incident angle of 55°, and the projection of the proton incident direction on the device surface is perpendicular to the side of the device surface, that is, θ is 90°. Obtain the single event flip cross section A2 as 1.1×10-14 cm 2 / bit, the comparison shows that A1 is larger than A2, therefore, the incident direction of A1 is the worst direction.

[0079] With the incident direction of A1, adjus...

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Abstract

The invention relates to a test method for measuring the low-energy proton single-event upset sensibility of a nanoscale device. According to the method, the correlation of the direction of incident protons and the direction of the channel width of the device is considered; a proton incident direction as well as an angle selection method and determination principle are provided in a low-energy proton single-event test; a metal film coarse adjustment energy reduction and air layer fine adjustment energy reduction-combined proton energy selection and acquisition method is provided; the thickness of a metal film layer and the thickness of an energy reduction air layer are obtained; and therefore, energy required by the low-energy proton single-event test can be obtained, a component for astronavigation can be realized, low-energy proton single-event effect evaluation of high-integration and small-characteristic size deep submicron and nanoscale devices can be realized, and needs for satellite anti-radiation reinforcement design can be satisfied to the maximum extent. With the test method of the invention adopted, nanoscale devices can be selected for space projects, reference data can be provided for the application of reinforcement design, and reference data can be also provided for the research and development of anti-radiation reinforcement nanoscale devices.

Description

technical field [0001] The invention relates to a method for measuring the sensitivity of a low-energy proton single-particle flip test of a nano-device, and belongs to the technical field of anti-radiation of space components. Background technique [0002] The spacecraft operates in the space radiation environment, and the interaction between a single high-energy particle in space and the components used in the spacecraft electronic system may cause the single event effect of the components, which is one of the important factors that induce spacecraft failure. [0003] With the development of microelectronics technology, the feature size of the device has developed to the nanometer level, and the single event effect of the device is more sensitive. The LET value of proton direct ionization can reach up to 0.45MeV-cm 2 / mg, in theory, in the heavy ion accelerator irradiation test, less than 1MeV-cm for LET 2 / mg particles can still detect the single event phenomenon, then ...

Claims

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Application Information

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IPC IPC(8): G01R31/28
CPCG01R31/28
Inventor 孙毅于庆奎罗磊魏志超唐民梅博吕贺李铮
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
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