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Method of producing layer structure, layer structure, a method of forming patterns and a semiconductor device

A layer structure and pattern technology, applied in the field of pattern formation, can solve problems such as difficulty in providing fine patterns

Active Publication Date: 2016-05-11
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Nowadays, depending on the small size of the pattern to be formed, it is difficult to provide a fine pattern with excellent profile only by the above-mentioned typical photolithography techniques

Method used

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  • Method of producing layer structure, layer structure, a method of forming patterns and a semiconductor device
  • Method of producing layer structure, layer structure, a method of forming patterns and a semiconductor device
  • Method of producing layer structure, layer structure, a method of forming patterns and a semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0129] 70g (0.2mol) of 4,4'-(9H-fluorene-9,9-diyl)diphenol, 33.2g (0.2mol) of 1,4-bis(methoxymethyl)benzene, 70g of Propylene glycol monomethyletheracetate (PGMEA) and 1.23 g (8 mmol) of diethyl sulfate were placed in a flask and polymerized while being kept at 110° C. The reaction was terminated when the weight average molecular weight of the sample was 2,500 to 3,000. When the polymerization reaction was complete, the reactant was slowly cooled to room temperature and added to 30 g of distilled water and 300 g of methanol, and the mixture was stirred vigorously and allowed to stand. Next, the precipitate obtained by removing the supernatant therefrom was dissolved in 60 g of propylene glycol monomethyl ether acetate (PGMEA), and then the solution was vigorously stirred by using 250 g of methanol and allowed to stand (first process). Herein, the precipitate obtained after removing the supernatant therefrom again was dissolved in 60 g of propylene glycol monomethyl ether acet...

Synthetic example 2

[0133] A polymer (Mw: 3000) represented by the following chemical formula 2a was obtained at 120° C. according to the same method as in Synthesis Example 1, except that 20.2 g (0.1 mol) of pyrene, 33.2 g (0.2 mol) of 1, 4-bis(methoxymethyl)benzene, 14.4 g (0.1 mol) of 2-naphthol, 0.6 g (4 mmol) of diethyl sulfate and 70 g of propylene glycol monomethyl ether acetate (PGMEA).

[0134] [chemical formula 2a]

[0135]

Synthetic example 3

[0137] A polymer (Mw: 3000) represented by the following chemical formula 3a was obtained at 120° C. according to the same method as in Synthesis Example 1, except that 16.7 g (0.1 mol) of carbazole, 25.8 g (0.1 mol) of 4 , 4'-oxybis((methoxymethyl)benzene), 0.77 g (0.05 mol) of diethyl sulfite and 43 g of propylene glycol monomethyl ether acetate (PGMEA).

[0138] [chemical formula 3a]

[0139]

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PUM

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Abstract

The invention provides a method of producing a layer structure, the layer structure, a method of forming patterns and a semiconductor device. The method of producing the layer structure includes forming a first organic layer (S1) by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part (S2) of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer (S3) through a curing process, so that the layer structure with excellent flat characteristics can be manufactured, and individual etching-back procedures or chemico-mechanical polishing procedures are not needed.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2014-0150602 filed with the Korean Intellectual Property Office on October 31, 2014, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention discloses a method of manufacturing a layer structure and a method of forming a pattern, and in particular discloses a method of manufacturing a layer structure for forming a multi-pattern structure such as a dual damascene interconnection structure and a method of forming a pattern method. Background technique [0004] Recently, the semiconductor industry has developed ultra-fine technology with patterns of several nanometers to tens of nanometers in size. Such ultra-fine technology basically requires effective lithographic technology. [0005] Typical photolithography techniques include: providing a material layer on a semiconductor subst...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/308G03F1/46G03F1/76G03F7/00
Inventor 金旼秀宋炫知姜善惠金成旻金瑆焕金永珉金润俊金惠廷南沇希白载烈尹星莉尹龙云李忠宪郑瑟基赵妍熹洪承希黄善民黄元宗李松世金命九刘奈莉
Owner SAMSUNG SDI CO LTD