Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method

A technology for chemical vapor deposition and single crystal growth, which is applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve problems such as difficult to achieve large-scale rapid production, and achieve technical efficiency improvement and rapid preparation. Effect

Inactive Publication Date: 2016-05-25
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The minimum time required for the growth of black phosphorus involved in this techn

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  • Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method
  • Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method
  • Method for growing monocrystal black phosphorus based on solid-source chemical vapor deposition method

Examples

Experimental program
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Example Embodiment

[0023] Example 1

[0024] This embodiment includes the following steps:

[0025] S 1 , The red phosphorus, metallic tin and tin tetraiodide are fully mixed in a weight ratio of 10-100:1-10:1 and then sealed in one end of the quartz ampoule, the end is regarded as the high temperature zone, and the other end is regarded as the low temperature zone; Vacuum until the pressure inside the quartz ampoule is below 0.01Pa;

[0026] S 2 , Place the high temperature zone of the quartz ampoule in the high temperature heating zone of the muffle furnace, and place the low temperature zone in the low temperature heating zone of the muffle furnace to heat separately; the high temperature heating zone is heated from room temperature 23°C to 500°C at a rate of 500°C / h , The low-temperature heating zone is heated from room temperature 23℃ to 460℃ at a rate of 460℃ / h, keeping the temperature difference between the high-temperature heating zone and the low-temperature heating zone 0.5h;

[0027] S 3 Aft...

Example Embodiment

[0032] Example 2

[0033] This embodiment includes the following steps:

[0034] S 1 , The red phosphorus, metallic tin and tin tetraiodide are fully mixed in a weight ratio of 10-100:1-10:1 and then sealed in one end of the quartz ampoule, the end is regarded as the high temperature zone, and the other end is regarded as the low temperature zone; Vacuum until the pressure inside the quartz ampoule is below 0.01Pa;

[0035] S 2 , The high temperature zone of the quartz ampoule is placed in the high temperature heating zone of the muffle furnace, and the low temperature zone is placed in the low temperature heating zone of the muffle furnace for heating; the high temperature heating zone is heated from room temperature 23°C to 700°C at a rate of 700°C / h , The low-temperature heating zone is heated from room temperature 23℃ to 600℃ at a rate of 600℃ / h, and the temperature difference between the high-temperature heating zone and the low-temperature heating zone is 1h;

[0036] S 3 After...

Example Embodiment

[0037] Example 3

[0038] This embodiment includes the following steps:

[0039] S 1 , The red phosphorus, metallic tin and tin tetraiodide are fully mixed in a weight ratio of 10-100:1-10:1 and then sealed in one end of the quartz ampoule, the end is regarded as the high temperature zone, and the other end is regarded as the low temperature zone; Vacuum until the pressure inside the quartz ampoule is below 0.01Pa;

[0040] S 2 , Place the high temperature zone of the quartz ampoule in the high temperature heating zone of the muffle furnace, and place the low temperature zone in the low temperature heating zone of the muffle furnace for heating; the high temperature heating zone is heated from room temperature 23°C to 1000°C at a rate of 1000°C / h , The low-temperature heating zone is heated from room temperature 23℃ to 800℃ at a rate of 800℃ / h, and the temperature difference between the high-temperature heating zone and the low-temperature heating zone is maintained for 5 hours;

[0...

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Abstract

A method for growing monocrystal black phosphorus based on a solid-source chemical vapor deposition method includes the steps that red phosphorus, metallic tin and tin tetraiodide are placed in one end, serving as a high-temperature zone, of a sealed cavity under the vacuum condition, and the other end of the sealed cavity is reserved to serve as a low-temperature zone; then, the high-temperature zone and the low-temperature zone are respectively heated for a reaction, cooling is performed in a gradient mode, and monocrystal black phosphorus is obtained in the low-temperature zone. By means of the method, high-purity monocrystal black phosphorus can be rapidly prepared.

Description

technical field [0001] The invention relates to a technology in the field of semiconductor material preparation, in particular to a method for growing single crystal black phosphorus based on a solid source chemical vapor deposition method. Background technique [0002] Black phosphorus is a tunable semiconductor material with excellent electrical properties. Compared with graphene, black phosphorus has an energy gap and good compatibility with silicon, which has great potential application value in the development of field emission transistors, photoelectric converters, secondary batteries and other components. The traditional preparation method of black phosphorus is to use mercury as a catalyst under high pressure or normal pressure, and use a small amount of black phosphorus as a seed crystal, and heat it at 493-643 Kelvin for 8 days. The preparation cycle is long, the purity is low, and the performance is not good. Stablize. [0003] After searching the prior art, it ...

Claims

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Application Information

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IPC IPC(8): C30B29/02C30B25/00
CPCC30B29/02C30B25/00
Inventor 陈长鑫
Owner SHANGHAI JIAO TONG UNIV
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