Check patentability & draft patents in minutes with Patsnap Eureka AI!

Preparation method of nanowire array

A technology of nanowire arrays and carbon nanotubes, which is applied in the field of large-area preparation of nanowire arrays, can solve problems such as complex processes, electron beam etching, and complex preparation methods of nanowire arrays, and achieve the effect of simple processes

Active Publication Date: 2016-06-15
TSINGHUA UNIV +1
View PDF13 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation method of nanowire arrays is relatively complicated, usually involving electron beam etching or coordinated molecular beam epitaxy growth, etc.
These methods all require large-scale equipment and instruments, the process is more complicated, the time is longer, and the size is difficult to achieve nanometer size.
Further, it is difficult to realize large-area preparation of nanowire arrays by using the above methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nanowire array
  • Preparation method of nanowire array
  • Preparation method of nanowire array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The method for preparing a large-area nanowire array provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0021] see figure 1 as well as figure 2 , an embodiment of the present invention provides a method for preparing a nanowire array 105 in a large area, which includes the following steps:

[0022] Step S10, providing a substrate 100;

[0023] Step S20, providing a carbon nanotube composite structure 110 having a plurality of micropores 116, the carbon nanotube composite structure 110 comprising a carbon nanotube structure 112 and a prefabricated layer 114 covering the surface of the carbon nanotube structure 112, And the carbon nanotube structure 112 includes a plurality of intersecting carbon nanotubes;

[0024] Step S30, disposing the carbon nanotube composite structure 110 on a surface 101 of the substrate 100, so that the surface 101 of the substrate 100 is partiall...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a preparation method of nanowire array. The method comprises the following steps: a substrate is provided; a carbon nanotube compound structure having a plurality of micropores is provided and the carbon nanotube compound structure have a plurality of orderly arranged and cross-set carbon nanotubes and thereby forms a plurality of micropores; the carbon nanotube compound structure is arranged at one surface of the substrate; the carbon nanotube compound structure is used as a covering film to conduct dry etching on the substrate, and thereby a substrate with patterned projections is obtained; the nanotube compound structure is removed; photoresist layers are formed on the surface of the patterned projections to cover the patterned projections; the photoresist layersare removed and partial residue photoresist is formed at intersections of various raised lines of the patterned projections; and the remaining photoresist is used as a covering film to conduct dry etching on the substrate. The method is simple in process and a large area of nanowire arrays can be prepared perpendicular to the substrate.

Description

technical field [0001] The invention relates to a method for preparing a microstructure, in particular to a method for preparing a nanowire array in a large area. Background technique [0002] Nanowire arrays are widely favored in the field of nanometer research because of their excellent physical and electronic properties. However, the preparation method of the nanowire array is relatively complicated, usually involving electron beam etching or matching molecular beam epitaxy. These methods all require large-scale equipment and instruments, the process is more complicated, the time is longer, and the size is difficult to achieve nanoscale size. Furthermore, it is difficult to realize large-area preparation of nanowire arrays by the above method. Contents of the invention [0003] In view of this, it is indeed necessary to provide a method for preparing nanowire arrays with a simple process and a large area. [0004] A method for preparing a nanowire array, the method c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/02B82Y40/00
CPCG03F7/0035G03F7/40G03F7/325H01J37/32009
Inventor 李群庆金元浩范守善
Owner TSINGHUA UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More