Thin film transistor and preparation method therefor, and array substrate

Abstract

The invention discloses a carbon nanotube bottom-gate thin film transistor and a preparation method therefor, and an array substrate. The preparation method for the carbon nanotube bottom-gate thin film transistor comprises the steps of forming an active layer pattern, wherein the active layer is made from a carbon nanotube material; and forming a metal oxide layer pattern, wherein the metal oxide layer at least covers all the regions, positioned between the source electrode and the drain electrode of the thin film transistor, of the active layer. By adoption of the carbon nanotube bottom-gate thin film transistor and the preparation method therefor, and the array substrate, an effect of improving the stability, reliability, mobility ratio and the like of the carbon nanotube bottom-gate thin film transistor is achieved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and an array substrate. Background technique [0002] Single-wall semiconducting carbon nanotubes have broad application prospects in the fields of logic circuits and optoelectronic devices due to their excellent electrical and mechanical properties, such as field effect transistors, inverters, ring oscillators, and light-emitting devices. The synthesis methods of single-walled carbon nanotubes mainly include chemical vapor deposition, arc discharge and laser ablation, etc. The synthesized carbon nanotubes contain 2 / 3 semiconducting carbon nanotubes and 1 / 3 metallic carbon nanotubes. At present, the methods for purifying semiconducting carbon nanotubes mainly include gel method, density gradient centrifugation method and polymer selective dispersion method. Although single-wall semiconducting carbon nanotubes with high purity...

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Problems solved by technology

However, a preparation method that can avoid these problems has not been found so far. Therefore, the preparation technology of carbon nanotube bottom-gate thin film transistors needs further exploration.

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