C-axis sapphire polishing solution and preparation method thereof

A polishing liquid, sapphire technology, applied in the field of sapphire polishing, to achieve the effect of improving the effect

Inactive Publication Date: 2015-08-12
LENS TECH CHANGSHA
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Problems solved by technology

[0005] The object of the present invention is to provide a kind of sapphire two-inch piece C-direction polishing liquid and preparation method thereof, to solve the technical problem of sapphire two-inch piece polishing

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  • C-axis sapphire polishing solution and preparation method thereof

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preparation example Construction

[0026] The preparation method steps of above-mentioned C to sapphire polishing liquid are as follows:

[0027] (1) Use a 500-mesh screen filter system to remove impurity particles in the silica sol raw material;

[0028] (2) Control the rotational speed between 60-120rpm, add the brightener and active dispersant while stirring the silica sol with the above-mentioned filtered concentration of 35%-50% at a flow rate of 0.5-2.0L / min, the flow rate is too fast It will lead to too high local reagent concentration of silica sol, which will lead to increased viscosity or even crystallization, which will affect the use effect;

[0029] (3) Continue to add oxidant and synergist to the closed reaction tank at a flow rate of 0.5-2.0 L / min in sequence, and adjust the pH value to 10-11 with the synergist to prepare a sapphire polishing solution.

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Abstract

The invention provides a C-axis sapphire polishing solution and a preparation method thereof. The C-axis sapphire polishing solution consists of the following components in parts by weight: 90-97 parts of silica sol, 0.01-2 parts of a brightener, 0.01-2 parts of an active dispersing agent, 0.01-1 part of an oxidant, 0.01-2 parts of a synergist and 1-5 parts of deionized water. According to the C-axis sapphire polishing solution, silica sol is used as an abrasive material and therefore the influence of aluminum oxide and a composite abrasive material containing other components on the stability of polishing solution is avoided; due to the added oxidant, the polishing solution generates a certain oxidization reaction with a sapphire wafer in the polishing process so as to reduce the surface roughness.

Description

technical field [0001] The invention relates to the technical field of sapphire polishing, in particular to a C-direction sapphire polishing solution and a preparation method thereof. Background technique [0002] Sapphire, also known as white gem, is a man-made single crystal material with a molecular formula of Al 2 o 3 , is a hexagonal crystal structure, extremely high hardness (Mohs hardness 9.2 ~ 9.4), and high temperature resistance, wear resistance, corrosion resistance, wide light transmission band, is a high-quality optical functional material. CMP (Chemical Mechanical Polishing, chemical mechanical polishing) technology combines the advantages of chemical and mechanical polishing. The application of CMP technology can not only obtain a high polishing rate, but also obtain a perfect surface. Sapphire crystal (a-Al 2 o 3 ) is a simple coordination oxide crystal belonging to the hexagonal crystal system. If a four-axis oriented coordinate system is established in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 周群飞饶桥兵肖浪
Owner LENS TECH CHANGSHA
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