Fabrication method of capacitor and fabrication method of complementary metal-oxide semiconductor (CMOS) image sensor
A manufacturing method and capacitor technology, which is applied in the manufacturing of capacitors and CMOS image sensor manufacturing, can solve the problems of poor electrical isolation of STI structures, leakage between capacitors and semiconductor substrates, etc., achieve good electrical isolation effects, and prevent leakage Effect
Active Publication Date: 2016-06-15
SEMICON MFG INT (SHANGHAI) CORP
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[0010] The problem to be solved by the present invention is: in the existing capacitor manufacturing method, the electrical isolation effect of the STI structure is not good, resulting in the possibility of electric leakage between the capacitor and the adjacent active region on the semiconductor substrate
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[0039] As mentioned above, the existing methods for manufacturing capacitors have the following disadvantages: the electrical isolation effect of the STI structure is not good, resulting in the possibility of electric leakage between the capacitor and the adjacent active region on the semiconductor substrate.
[0040] After research, it is found that the reason for the above problems is that: image 3 As shown, while removing the hard mask layer 32 with a certain thickness, the part of the stress buffer layer 31 exposed in the trench 10 will also be exposed to the etchant or etching gas, so that the stress buffer layer 31 located in the STI The portion between the structure 2 and the adjacent trench 10 is etched away, and a gap 310 is formed in the stress buffer layer 31 , so that the side of the STI structure 2 facing the trench 10 is exposed in the gap 310 . In this way, the STI structure 2 will also be exposed to the etchant or etching gas, causing a part of the STI structu...
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The invention relates to a fabrication method of a capacitor and a fabrication method of a complementary metal-oxide semiconductor (CMOS) image sensor. The fabrication method of the capacitor comprises the following steps of providing a substrate formed with a shallow trench isolation (STI) structure, wherein the upper surface of the STI structure is higher than the surface of the substrate; forming a stack layer on the substrate and the STI structure, wherein the stack layer comprises a stress buffer layer and a hard mask layer on the stress buffer layer; forming an opening exposed out of the surface in the stack layer; forming a protection side wall on the side wall of the opening; etching the substrate along the opening to form grooves; removing the stack layer with a certain thickness; removing the protection side wall, and forming a dielectric layer and a conductive layer, wherein the dielectric layer and the conductive layer cover the surface of the remaining stack layer, and the grooves are filled with the dielectric layer and the conductive layer; and removing the remaining stack layer, the dielectric layer and the conductive layer on the surface of the substrate, wherein the conductive layer and the dielectric layer in the grooves and the substrate form the capacitor. The scheme provided by the invention is used for solving the following problem that electricity between the capacitor and an active region near to the substrate is probably leaked due to poor electrical isolation effect of the STI structure in the traditional fabrication method of the capacitor.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a capacitor and a method for manufacturing a CMOS image sensor. Background technique [0002] Image sensor (ImageSensor) is a device that converts optical information into electrical signals. At present, image sensors have been widely used in fields such as camera, image acquisition, scanner and industrial measurement. Existing image sensors can be classified into two types, CCD (Charge Coupled Device, Charge Coupled Device) image sensors and CMOS (Complementary Metal-Oxide Semiconductor, Metal Oxide Semiconductor) image sensors. Compared with CCD image sensors, CMOS image sensors (CIS for short) have wider applications. [0003] In addition to photosensitive elements, CMOS image sensors often include other elements, such as transistors, capacitors, and so on. The structure of a capacitor in the existing CMOS image sensor will be introduced as...
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IPC IPC(8): H01L27/146
Inventor 王伟汪新学郑超伏广才
Owner SEMICON MFG INT (SHANGHAI) CORP