Method for making mems double-layer suspended microstructure and mems infrared detector
A manufacturing method and microstructure technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of reducing the infrared responsivity of infrared detectors, etc.
Active Publication Date: 2017-09-29
CSMC TECH FAB2 CO LTD
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Problems solved by technology
At present, MEMS infrared detectors generally adopt a single-layer suspended microstructure. Although this process is very simple, when the size of the infrared detector chip is reduced, the suspended absorption area (film-like absorption layer) used for infrared radiation absorption is correspondingly reduced. will be reduced, which will greatly reduce the infrared responsivity of the infrared detector
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[0033] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.
[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of ...
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Abstract
A method for manufacturing a MEMS double-layer suspended microstructure, which can produce a double-layer suspended microstructure, and use the double-layer suspended microstructure (suspended microstructure with a first dielectric layer and a second dielectric layer) to produce infrared detection Since the second dielectric layer does not need to make cantilever beams, the second dielectric layer can be made larger than the first dielectric layer, so it can have a larger suspension absorption area than the infrared detector with a single-layer suspension microstructure, thus having High infrared responsivity. In addition, a MEMS infrared detector is also disclosed.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a MEMS double-layer suspension microstructure and a MEMS infrared detector. Background technique [0002] MEMS (Micro Electro Mechanical Systems) is the use of integrated circuit manufacturing technology and micro-processing technology to manufacture microstructures, microsensors, microactuators, control processing circuits, and even interfaces and power supplies on one or more chips. micro-integrated system. Compared with traditional infrared detectors, infrared detectors prepared with MEMS technology have obvious advantages in terms of volume, power consumption, weight and price. At present, infrared detectors made with MEMS technology have been widely used in military and civilian fields. According to different working principles, infrared detectors are mainly divided into thermopile, pyroelectric and thermistor detectors. The thermo...
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IPC IPC(8): B81B7/02B81C1/00
CPCG01J5/024G01J5/0853B81B2201/0278B81B2203/0118B81C1/0015B81B7/02B81C1/00B81C2201/0197G01J1/04G01J1/42
Inventor 荆二荣
Owner CSMC TECH FAB2 CO LTD