Infrared detector based on CMOS (complementary metal oxide semiconductor) process and preparation method thereof
An infrared detector and process technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, and low yield rate, and achieve the effects of reducing process difficulty, small chip area, and high yield rate
Pending Publication Date: 2022-02-25
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology
[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector based on CMOS technology and its preparation method, which solves the problems of low performance, low pixel scale and low yield rate of traditional MEMS technology infrared detectors. Low-level problems, enhanced structural stability of infrared detector pixels
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[0072] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.
[0073] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.
[0074] figure 1 It is a schematic diagram of a three-dimensional structure of an infrared detector provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector provided by an embodiment of the present disclosure. combine ...
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The invention relates to an infrared detector based on a CMOS process and a preparation method thereof. The infrared detector comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, and the CMOS measurement circuit system and the CMOS infrared sensing structure are prepared by adopting the CMOS process; each of an absorption plate and a beam structure comprises a thermosensitive layer, and a material for forming the thermosensitive layers comprises at least one of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium; the infrared detector pixel further comprises a reinforcing structure, the reinforcing structure is arranged corresponding to the position of the second columnar structure, and the reinforcing structure is used for enhancing the connection stability between the second columnar structure and the beam structure. Through the technical scheme disclosed by the invention, the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS (Micro Electro Mechanical System) process infrared detector are solved, and the structural stability of the pixel of the infrared detector is enhanced.
Description
technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector based on a CMOS process and a preparation method thereof. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing...
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Login to View More IPC IPC(8): G01J5/24
CPCG01J5/24G01J2005/0077Y02P70/50
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD