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Device and method for controlling gas density distribution on magnetron sputtering cathode surface

A cathode surface and gas density technology, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problems of poor film thickness uniformity, large difference, sputtering deposition rate difference, etc., and achieve gas The effect of uniform density distribution

Active Publication Date: 2019-06-25
高邮市汇金新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It may be due to the magnetic field at both ends of the cathode target and the uneven supply distribution of the working (reaction) gas density, which makes the sputtering deposition rate at both ends of the cathode target different from the middle part, and the closer to the two ends, the greater the difference
As a result, the thickness uniformity of the film formed by the sputter coating on the substrate is poor, and the thickness of the film layer corresponding to the middle part of the cathode target is basically the same, while the thickness of the film layer corresponding to the two ends of the cathode target is relatively large.

Method used

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  • Device and method for controlling gas density distribution on magnetron sputtering cathode surface
  • Device and method for controlling gas density distribution on magnetron sputtering cathode surface
  • Device and method for controlling gas density distribution on magnetron sputtering cathode surface

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Embodiment Construction

[0015] see image 3 , 4 In the shown flexible and continuous magnetron sputtering cathode surface gas density distribution control device, the shield 1 includes a panel 11 and a peripheral plate 12 , and the cathode target 2 is located in the shield 1 . A working (reaction) gas injection port 5 is opened on the peripheral plate 12 .

[0016] A rectangular hole 13 is provided on the shielding cover panel, and two baffle plates 3, 4 are stacked in turn on the four inner corners of the rectangular hole 13 on the upper part of the panel, and the two baffle plates 3, 4 at each inner corner have blocked each inner corner. In this way, the oblong hole 13 forms the waist-shaped sputtering hole 14 except the four inner corners 131 that are blocked by the shielding plate. The length direction of the waist-shaped sputtering hole is consistent with the length direction of the cathode target. The two ends of the waist-shaped sputter hole are broken lines composed of five line segments....

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Abstract

The invention provides a magnetron sputtering cathode surface gas density distribution control device. Cathode surface gas density distribution can be even, and then it is guaranteed that the thickness of a coating film is basically the same in the length direction of a cathode target. The device comprises the cathode target located in a shielding cover, a kidney-shaped sputtering hole is formed in a shielding cover panel exactly facing the cathode target, the width of the middle of the kidney-shaped sputtering hole is consistent, and the widths of the two ends of the kidney-shaped sputtering hole are gradually reduced. The length direction of the kidney-shaped sputtering hole is consistent with that of the cathode target.

Description

technical field [0001] This technology relates to magnetron sputtering coating technology, specifically, it is a technology for controlling gas density distribution on the cathode surface in a flexible and continuous magnetron sputtering multi-cathode deposition device, which is widely used in flexible display devices, flexible smart touch screens, and flexible thin-film solar energy. In the manufacture of batteries. Background technique [0002] In magnetron sputtering cathode deposition, the cathode target is located in the shield, and a rectangular sputtering hole is opened on the shield panel facing the cathode target, and the length direction of the sputtering hole is consistent with the length direction of the cathode target. When the magnetron sputtering device is working, the electrons hit the argon gas to generate ions, and the generated ions hit the cathode target surface under the action of the electric field to sputter out the target atoms. The target atoms pass ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/35C23C14/54
Inventor 王鲁南朴賸一王建华全武贤李锺允窦立峰
Owner 高邮市汇金新材料科技有限公司
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