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Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

An imaging device and photoelectric conversion element technology, applied in radiation control devices, circuits, electrical components, etc., can solve problems such as affecting color mixing, reducing overlapping accuracy, and achieving the effect of suppressing separation

Active Publication Date: 2016-06-29
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, miniaturization will reduce the overlap accuracy between layers, especially between light shielding films, color filters and microlenses, which seriously affects color mixing

Method used

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  • Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
  • Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
  • Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0054] figure 1 is a schematic block diagram showing an exemplary solid-state imaging device 100 according to the first embodiment of the present technology. figure 1 The illustrated solid-state imaging device 100 includes a substrate 111 made of silicon, a pixel portion 113 including a plurality of pixels 112 arranged in an array on the substrate 111, a vertical drive circuit 114, a column signal processing circuit 115, a horizontal drive circuit 116, an output circuit 117 and control circuit 118.

[0055] The pixel portion 113 includes a plurality of pixels 112 regularly arranged in a two-dimensional array. The pixel portion 113 includes an effective pixel area that actually receives incident light, amplifies signal charges generated by photoelectric conversion of the incident light, and outputs the amplified signal charges to the column signal processing circuit 115, and a black reference pixel area (not shown). , the black reference pixel area is used to output optical b...

no. 2 example

[0087] Next, a solid-state imaging device 200 according to a second embodiment will be described. Because the solid-state imaging device 200 has the same figure 2 The solid-state imaging devices 100 in have the same configuration, so the same components are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0088] Figure 4 The illustrated solid-state imaging device 200 has a color filter 25 provided in the same layer as the light shielding film 17 and an adhesive film 29 formed on the side walls of the light shielding film 17 and on the insulator film 18 .

[0089] An adhesive film 29 is formed between the light shielding film 17 and the color filter 25 . The adhesive film 29 is formed on the side wall of the light shielding film 17 , but is not formed on one surface perpendicular to the side wall of the light shielding film 17 . An adhesive film 29 is also formed on the insulator film 18 . In addition to the shape of the adhesive film 29...

no. 3 example

[0098] Next, a solid-state imaging device 300 according to a third embodiment will be described. Because the solid-state imaging device 300 is different from the figure 2 The solid-state imaging devices 100 in have the same configuration, so the same components are denoted by the same reference numerals, and descriptions thereof are omitted.

[0099] Image 6 The illustrated solid-state imaging device 300 has an adhesive film 39 formed between one surface of the light shielding film 17 and the color filter 15 .

[0100] The adhesive film 39 is formed on a part of the light shielding film 17 , that is, on one surface thereof in this embodiment, and is not formed on the side wall of the light shielding film 17 and on the insulator film 18 . Adhesive film 39 material and other features and figure 2 The illustrated adhesive film 19 is the same, and thus a description thereof is omitted.

[0101] Next, a manufacturing method of the solid-state imaging device 300 will be descr...

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PUM

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Abstract

A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

Description

[0001] This application is a divisional application of an invention patent application with an application date of March 7, 2012, an application number of 201210058232.3, and an invention title of "solid-state imaging device components, manufacturing method of solid-state imaging device, and electronic equipment". technical field [0002] The present disclosure relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and electronic equipment. Background technique [0003] Charge-coupled device (CCD) solid-state imaging devices and complementary metal-oxide-semiconductor (CMOS) solid-state imaging devices are widely used in digital cameras and video cameras. These solid-state imaging devices are roughly classified into two types in terms of the direction in which light is incident on a light receiving unit. [0004] One of these types includes a solid-state imaging device that receives light incident on the front side of a semiconduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14621H01L27/14623H01L27/14627H01L27/14685
Inventor 荻田知治山本笃志田谷圭司大塚洋一田渕清隆
Owner SONY CORP