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Polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber

A polarization-insensitive, light-driven technology used in terahertz applications, which can solve problems such as high absorption fixation

Inactive Publication Date: 2016-06-29
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the designed terahertz wave absorber structure can achieve frequency band broadening, the frequency for achieving high absorption is fixed

Method used

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  • Polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber
  • Polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber
  • Polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1, such as figure 1 and figure 2 As shown, the absorber consists of a dielectric substrate 3, a metal pattern layer 4 etched on the dielectric substrate 3 (circular metal slotted ring resonator structure), semiconductor silicon Si embedded in the slotted ring structure, and semiconductor silicon Si conductance The rate σ varies with the light power, and the metal backplane is composed of the figure 1 In the unit structure, the length and width of the first cycle are both p, the outer ring radius of the circular slotted ring is r, the line width is w, the slot width is g, and the metal film thickness of the slotted ring structure is t m , the length of the semiconductor silicon filled at the opening of the slit ring is a. The thickness of the dielectric substrate is t s , the thickness of the metal base plate is t g , by changing the geometric parameters of the unit structure, it can work in different frequency ranges. The variation range of the structural ...

Embodiment 2

[0049] Example 2, such as image 3 and Figure 4 As shown, the absorber consists of a dielectric substrate 3, a metal pattern layer 4 etched on the dielectric substrate 3 (square metal slotted ring resonator structure), semiconductor silicon Si embedded on the metal pattern layer 4, and the conductivity of the semiconductor silicon Si σ varies with the light power, and is composed of a metal backplane, in which, the length and width of one period of the unit structure are p, the side length of the square is l, the line width is w, the slit width is g, and the metal film thickness of the slotted ring structure is tm, and the length of the semiconductor silicon filled at the opening of the slot ring is a. The thickness of the dielectric base plate is ts, and the thickness of the metal base plate is tg. By changing the geometric parameters of the unit structure, it can work in different frequency ranges. The variation range of the geometric parameters of the basic unit structur...

Embodiment 3

[0061] Embodiment 3, the absorber consists of a dielectric substrate, a metal pattern layer etched on the dielectric substrate (slotted cross-shaped resonator structure), semiconductor silicon Si embedded in the slotted cross, and the conductivity σ of the semiconductor silicon Si increases with The light power varies with the difference, and the metal backplane is composed, in which, the length and width of the unit structure period are p, the side length of the slotted cross is l, the side is w, the slot width is g, and the thickness of the slotted cross-shaped metal film is t m , the length of the semiconductor silicon filled at the cross-shaped opening of the groove is a. The thickness of the dielectric substrate is t s , the thickness of the metal base plate is t g , by changing the geometric parameters of the unit structure, it can work in different frequency ranges. The variation range of the structural geometric parameters of the basic unit of the absorber:

[0062]...

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Abstract

The invention provides a polarization-insensitive photic driving tunable TeraHertz wave metamaterial absorber comprising a unit structure, a photosensitive semiconductor, and a metal bottom plate. The unit structure comprises a medium substrate, a metal pattern layer, and a metal back plate. The medium substrate is disposed between the metal pattern layer and the metal back plate, and the metal pattern layer is provided with the photosensitive semiconductor in an embedded manner, and the unit structure is disposed on the metal bottom plate. By adopting different conductivities of loading semiconductor silicon, the slotting ring structure electromagnetic resonance and impedance matching characteristic can be adjusted to realize the absorption characteristic adjusting effect in the wide TeraHertz frequency range. When the TeraHertz is irradiated on the absorber, the magnetic field loop is generated on the periphery of the resonance structure, and the generating of the ohmic loss of the metal sheet and the semiconductor silicon can be caused by the magnetic field loop, and the dielectric loss can be generated on the dielectric substrate, and the electromagnetic energy of the electromagnetic waves can be converted into the heat energy by the dielectric loss and the ohmic loss, and therefore the TeraHertz loss absorption adjusting can be realized.

Description

technical field [0001] The invention belongs to the technical field of terahertz applications of metamaterials and electromagnetic functional materials, and relates to a terahertz absorber, in particular to a polarization-insensitive light-driven tunable terahertz wave metamaterial absorber. Background technique [0002] Terahertz technology is a very important cross-frontier field, which provides a very attractive opportunity for technological innovation, national economic development and national security. Terahertz research involves physics, optoelectronics and material science, etc. It has broad application prospects and application value in the fields of imaging, medical diagnosis, environmental science, information, national security and basic physics research, and has attracted attention from all over the world. Terahertz wave absorbers, which have great application potential in the fields of high-resolution spectral imaging, high data rate short-range communication, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q17/00G02B5/00
CPCH01Q17/00G02B5/003
Inventor 程用志章喆周钰杰
Owner WUHAN UNIV OF SCI & TECH
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