A kind of device and method for bonding ito nanowire at room temperature

Abstract

The invention provides a method for bonding indium tin oxide nanowires at room temperature. The method comprises the following steps: arranging a nano structure A to be welded and a nanowire B serving as a welding material on one side face of a probe tip facing to a sample stage, and preparing a polymer solidified material sensitive to electron beam irradiation on the probe tip; controlling a probe to move towards the nanowire B serving as the welding material by using a large scale displacement device and a small scale displacement device to make the probe be contacted with a top end of the nanowire B; bonding and curing the nanowire B by the probe tip; and controlling the probe to move, breaking the nanowire B by the probe and driving the nanowire B to move to an A surface to be welded and be contacted with the A surface, carrying out cold welding, and monitoring the welding process of the nanowire B by an electrical test unit, and wherein it indicates that the circuit is conductive when the contact resistivity between the nanowires is equivalent to the resistivity of the nanowire. The connection between the nanowire B and the probe is etched and disconnected by an electron beam or an ion beam, and the nanowire B is consistently connected with the nanowire A so as to bond the nanowire structures at the room temperature.

Description

technical field [0001] The present invention relates to a method for cold bonding nanowires at room temperature. It belongs to the technical field of advanced materials and advanced device construction. Background technique [0002] The gradual development of electronic technology and the improvement of people's functional requirements for electronics and electrical appliances have put forward new requirements for electronic devices. Traditional semiconductor devices are based on silicon semiconductor technology, which usually has the problem of not being able to withstand bending and breaking of devices caused by large mechanical impacts. With the introduction of the concept of flexible semiconductor devices and wearable devices in recent years. Some researchers have proposed the concept of "recoverable electronic devices". The materials or structures used to prepare such devices need to have the function of self-connection when subjected to large bending or impact fract...

AI Technical Summary

Problems solved by technology

[0003] Although flexible semiconductor devices made of organic materials can meet certain applications, the material parameters that restrict their performance, such as material mobility, temperature and voltage resistance, toxicity, etc., make their wide application difficult. Many researchers have studied the use of traditional semiconductor materials to prepare recoverable electronic devices, in order to meet higher requirements of the application

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