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Method for quickly measuring heat conductivity coefficient of semiconductor film

A thermal conductivity, semiconductor technology, applied in the field of microelectronics, can solve the problem of no fast and accurate measurement method and difficult measurement.

Inactive Publication Date: 2016-07-06
QINGDAO TECHNOLOGICAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The surface thermal conductivity of thin films, especially nano-scale semiconductor films, is much more difficult to measure than the normal thermal conductivity. Most of the experimental methods at this stage focus on the experimental measurement of the normal thermal conductivity of nano-scale semiconductor films, and for micro-nano-scale semiconductor films with a thickness of 20nm measurement, and there is no quick and accurate method

Method used

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  • Method for quickly measuring heat conductivity coefficient of semiconductor film
  • Method for quickly measuring heat conductivity coefficient of semiconductor film
  • Method for quickly measuring heat conductivity coefficient of semiconductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] refer to figure 1 , 2 , 3, a method for quickly measuring the thermal conductivity of a semiconductor thin film in this embodiment,

[0049] Firstly, a glass fiber with a length of 559 μm and a diameter of 9 μm is selected as the base material and coated with a gold film with a thickness of 10 nm as the base material, and the thermal diffusivity α of the base material is calculated by transient electrothermal technology w 6.95×10 -7 m 2 ·s -1 . Then sputter 4 times of zinc oxide films with a thickness of 60nm on the base material to form 4 samples, and calculate the thermal diffusivity α of the 4 samples by transient electrothermal technology under the same environmental conditions eff，1 is 7.06×10 -7 m 2 ·s -1 、α eff，2 7.15×10 -7 m 2 ·s -1 、α eff，3 is 7.29×10 -7 m 2 ·s -1 、α eff，4 7.36×10 -7 m 2 ·s -1 , for 4 sets of α eff Perform linear fitting to obtain a slope of 1.04×10 -8 m 2 ·s -1 ,

[0050] The slope=4δ 2 [k c -α w (ρc p ) c ] / πD(ρc...

Embodiment 2

[0053] A method for quickly measuring the surface thermal conductivity of a semiconductor thin film in this embodiment,

[0054] Firstly, a glass fiber with a length of 594 μm and a diameter of 9.17 μm is selected as the base material and coated with a layer of gold film with a thickness of 10 nm as the base material, and the thermal diffusivity α of the base material is calculated by transient electrothermal technology w is 7.06×10 -7 m 2 ·s -1 . Then sputtering 4 times of zinc oxide films with a thickness of 40nm on the base material to form 4 samples, and under the same environmental conditions, the thermal diffusivity α of the 4 samples was calculated by transient electrothermal technology. eff，1 7.11×10 - 7 m 2 ·s -1 、α eff，2 7.17×10 -7 m 2 ·s -1 、α eff，3 7.20×10 -7 m 2 ·s -1 、α eff，4 7.25×10 -7 m 2 ·s -1 , for 4 sets of α eff Perform linear fitting to obtain a slope of 4.52×10 -9 m 2 ·s -1 ,

[0055] The slope=4δ 2 [k c -α w (ρc p ) c ] / πD(ρc...

Embodiment 3

[0058] A method for quickly measuring the surface thermal conductivity of a semiconductor thin film in this embodiment,

[0059] First, select a piece of glass fiber with a length of 482 μm and a diameter of 9.73 μm as the base material and plate a layer of gold film with a thickness of 10 nm as the base material, and calculate the thermal diffusivity α of the base material through transient electrothermal technology w 6.64×10 -7 m 2 ·s -1 . Then sputter 4 zinc oxide films with a thickness of 20nm on the base material to form 4 samples, and calculate the thermal diffusivity α of the 4 samples by transient electrothermal technology under the same environmental conditions eff，1 6.66×10 - 7 m 2 ·s -1 、α eff，2 is 6.67×10 -7 m 2 ·s -1 、α eff，3 is 6.69×10 -7 m 2 ·s -1 、α eff，4 6.71×10 -7 m 2 ·s -1 , for 4 sets of α eff Perform linear fitting to obtain a slope of 1.75×10 -9 m 2 ·s -1 ,

[0060] The slope=4δ 2 [k c -α w (ρc p ) c ] / πD(ρc p ) w

[0061] ...

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Abstract

The invention relates to a method for quickly measuring a heat conductivity coefficient of a semiconductor film. The method comprises the following steps: sputtering semiconductor films in thickness of delta<2> for n times on a substrate material spluttered with a gold film, thereby forming n samples; calculating thermal diffusion coefficients alpha<eff,n> of the n samples by adopting a transient electric heating technique under equal environmental conditions; performing linear fitting on n sets of alpha<eff,n>, thereby acquiring slope; solving the heat conductivity coefficient k<c> of the semiconductor film in thickness of delta<2> according to slope=4delta<max>[k<c>-alpha<w>(rho c)<c>] / pi D(rho c)<w>. According to the method provided by the invention, the measuring device is simple, the measuring signal is strong, the measuring period is short and reliable parameter data can be supplied for the setting of thermophysical property of various ultra-thin semiconductor films in thermal design and thermal management of the electronic products at present.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for rapidly measuring the surface thermal conductivity of a semiconductor film with a film thickness of nanometer order. Background technique [0002] As semiconductor thin film materials are widely used in micro / nano electronic devices, optoelectronic devices and other fields, at the same time, with the continuous reduction of the feature size of integrated circuit systems, the thermal performance characterization technology of nanostructure materials has attracted more and more attention. The thermal conductivity of semiconductor thin films is quite different from that of bulk materials. Research on the thermal conductivity of nanoscale semiconductor thin films is beneficial to scientifically guide the thermal design and thermal management of microelectronic devices. The surface thermal conductivity of thin films, especially nano-scale semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/20
CPCG01N25/20
Inventor 林欢董华王永春王洪伟张文婵
Owner QINGDAO TECHNOLOGICAL UNIVERSITY
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