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A kind of color microdisplay device and preparation method

A technology of micro-display devices and micro-display chips, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as crosstalk, and achieve the effect of solving the problem of light-emitting crosstalk

Active Publication Date: 2018-03-27
上海君万微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

From a theoretical analysis, this solution can partially eliminate the reflective crosstalk of the LED micro-pixel array, but the LED light at various incident angles is not completely collimated after being reflected by the lens, so the crosstalk still exists

Method used

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  • A kind of color microdisplay device and preparation method
  • A kind of color microdisplay device and preparation method
  • A kind of color microdisplay device and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment is related to the preparation of a micro-pixel array wafer, and its preparation process is as follows:

[0044] 1) Depositing and growing a gallium nitride (GaN) LED epitaxial wafer on a polished sapphire substrate 303 .

[0045] 2) The LED micro-mesas array 301 is etched on the GaN LED epitaxial wafer, the etching depth is from the p-type GaN layer 308 to the quantum well 307 , and the etching ends at the n-type GaN layer 302 . The LED micro-mesas etched in this embodiment are rectangular, the area of ​​the LED micro-mesas is 15um×15um, and the distance between adjacent micro-mesas is 5um. The shape of the micro-mesas of the array of the present invention is not limited to the rectangular shape, and the area of ​​the mesas is set according to needs and process conditions, and is not limited to the given dimensions.

[0046] 3) Depositing a SiO2 passivation layer 304 on the surrounding sides of each LED micro-mesa on the epitaxial wafer, so as to cover ...

Embodiment 2

[0052] This embodiment is related to the preparation of the first type of imaging screen, the specific process is as follows:

[0053] 1) Coating or depositing 20-30um white phosphor powder on the transparent substrate 102 to form a phosphor film 103 on the entire surface, see Figure 4 , 5 , the transparent substrate 102 may be a glass substrate or a plexiglass substrate or a sapphire substrate.

[0054] 2) Coating three primary color filter films arranged in an array on the above-mentioned white phosphor film 103 at set intervals, the three primary color filter films are red filter film 103, green filter film 104 and blue filter film 105. The color sorting is carried out in an array distribution according to the rule set in the figure. In this embodiment, the interval between adjacent filter films arranged in an array is 5um, and the area of ​​each filter film is 15um×15um, thereby forming a filter film pixel array of three primary colors, thus forming the first type of co...

Embodiment 3

[0056] This embodiment is related to the preparation of the second type of imaging screen, the specific process is as follows:

[0057] 1) Coating or depositing 20-30um white phosphor powder on the transparent substrate 102 to form a white phosphor film 103, see Figure 6 , 7 , the transparent substrate 102 may be a glass substrate or a plexiglass substrate or a sapphire substrate.

[0058] 2) Coating photoresist on the surface of the above-mentioned white phosphor film 103, and forming a micro-surface phosphor film 402 arranged in an array through photolithography, development and etching, which is the same as the array arrangement of the above-mentioned three-color filter film , the size and spacing of the micro-facet phosphor film are determined by the size of the real image formed by the LED micro-pixel through the micro-lens. The size of the micro-facet phosphor film in this embodiment is 15um × 15um, and the distance between adjacent micro-facet phosphor films is 5um. ...

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Abstract

The invention relates to a color micro display device and a preparation method thereof. A chip comprises a blue-light GaN LED micro-pixel array wafer, a micro lens, a color imaging screen and a drive backboard, wherein the drive backboard is bonded to the blue-light GaN LED micro-pixel array wafer through flip-chip bonding; the wafer bonded with the drive backboard and the color imaging screen are arranged at respective sides of two mirror surfaces of the micro lens respectively; a light-exiting surface on the wafer is opposite to the corresponding mirror surface of the micro lens, so that each LED micro-pixel on the wafer is refracted through the micro lens and is imaged on the color imaging screen. The preparation method comprises preparation of the blue-light GaN LED micro-pixel array wafer, preparation of the color imaging screen and preparation of the chip by the prepared wafer, the imaging screen and the micro lens. The color micro display device has the advantages that the problem of lighting crosstalk in imaged pixels is solved; and meanwhile, full-color display of a GaN LED is achieved under the condition of not increasing the complexity of the GaN LED wafer process.

Description

technical field [0001] The invention relates to an LED light-emitting device and a preparation method, in particular to a color micro-display device and a preparation method. Background technique [0002] At present, the great challenge for microdisplays based on GaN LED arrays is how to achieve full-color display. One possible solution is to simultaneously prepare red, green, and blue LED arrays on the same substrate. This solution has difficulties in process implementation and pixel driving. Since red, green and blue diodes require different quantum well materials, it is impossible to grow quantum well structures of different materials at one time in the process. On the other hand, the red, green, and blue LEDs have different threshold voltages, which makes the driving of each pixel LED very complicated. The Lau research group of the Hong Kong University of Science and Technology proposes to manufacture three micro-LED pixel array chips that emit red, green, and blue li...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/58
CPCH01L27/156H01L33/58
Inventor 张希娟李佩
Owner 上海君万微电子科技有限公司
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