LED epitaxial structure and preparation method therefor

Abstract

The invention discloses an LED epitaxial structure. The LED epitaxial structure comprises a substrate, and a GaN core-forming layer, a non-doping GaN layer, an N type GaN layer, a dual-heterojunction layer and a P type GaN layer which are laminated on the substrate in sequence, wherein the LED epitaxial structure also comprises an SiN<x> layer positioned between the N type GaN layer and the dual-heterojunction layer; and multiple cut-through nano holes are formed in the SiN<x> layer. The SiN<x> layer adopts a nano porous structure, so that the dislocation density of the active region formed by the dual-heterojunction layer can be effectively lowered, the non-radiation recombination center of the active region is reduced consequently, and the internal quantum efficiency of the LED epitaxial structure is improved; and in addition, the in-situ grown SiN<x> layer with the nano porous structure also can reduce the total reflection loss of light, and the light output efficiency of the LED epitaxial structure can be improved as well. The preparation method for the LED epitaxial structure is simple and easy to implement, low in process cost, and capable of effectively ensuring the product yield.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure and a preparation method thereof. Background technique [0002] As a new type of energy-saving light source, GaN-based LED is expected to bring light to as many as 1.5 billion people in the world. However, if it wants to completely replace ordinary lighting and truly enter thousands of households, it needs to further reduce costs, improve luminous intensity and luminous intensity. efficiency. All of these need to be based on the research and development of new high-performance GaN-based LED epitaxial structures, so it is of great significance to carry out research on GaN-based new LED epitaxial structures. [0003] At present, the epitaxial layers of commercial GaN-based LEDs are mostly two-dimensional multilayer film structures, mainly including undoped layers, Si-doped n-type layers, InGaN / GaN multi-quantum well active layers and Mg-doped p-ty...

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Problems solved by technology

[0010] For this reason, what the present invention aims to solve is the problem that the existing LED epitaxial structure has high preparation cost and is difficult to realize white light emission, thereby providing an LED epitaxial structure with low preparation cost and capable of realizing white light emission and its preparation method

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