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Silicon substrate, manufacturing method therefor, and IPD device comprising silicon substrate

A manufacturing method and technology for silicon substrates, which are applied in the manufacture of electrical solid-state devices, semiconductor devices, and semiconductor/solid-state devices, etc., can solve the problems of substrate inversion and unstable resistivity, and achieve stable resistivity and stable performance. Effect

Active Publication Date: 2016-07-13
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application aims to provide a P-type silicon substrate, a manufacturing method thereof and an IPD device including the same, so as to solve the problem of unstable resistivity of the substrate of the IPD device in the prior art due to the fact that interstitial oxygen easily forms oxygen thermal donors, even the problem of substrate inversion

Method used

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  • Silicon substrate, manufacturing method therefor, and IPD device comprising silicon substrate
  • Silicon substrate, manufacturing method therefor, and IPD device comprising silicon substrate
  • Silicon substrate, manufacturing method therefor, and IPD device comprising silicon substrate

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Embodiment 1

[0046] Take the pre-formed P-type silicon substrate as the transitional silicon substrate, and carry out carbon ion implantation on the transitional silicon substrate with an implantation dose of 10 13 , operating temperature is 40°C. Then, treat at 950° C. for 2 hours to obtain a silicon substrate.

Embodiment 2

[0048] Take the pre-formed P-type silicon substrate as the transitional silicon substrate, and carry out carbon ion implantation on the transitional silicon substrate with an implantation dose of 10 13 , operating temperature is 40°C. Perform germanium ion implantation to the region on the upper surface of the transitional silicon substrate to form the first doped region, with an implantation dose of 10 16 , the operating temperature is 40°C, and the thickness of the first doped region is 10 microns. Then, perform RCA cleaning on the doped transitional silicon substrate, and treat it at 950° C. for 2 hours to obtain a silicon substrate.

Embodiment 3

[0050] Take the pre-formed P-type silicon substrate as the transitional silicon substrate, and carry out carbon ion implantation on the transitional silicon substrate with an implantation dose of 10 14 , operating temperature is 30°C. Perform germanium ion implantation to the region on the upper surface of the transitional silicon substrate to form the first doped region, with an implantation dose of 10 15 , the operating temperature is 30°C, and the thickness of the first doped region is 10 microns. Perform germanium ion implantation to the region of the lower surface of the transitional silicon substrate to form the second doped region, with an implantation dose of 10 15 , the operating temperature is 30° C., and the thickness of the second doped region is 0.1 μm. Then, perform RCA cleaning on the doped transitional silicon substrate, and treat it at 1000° C. for 2 hours, and treat it at 900° C. for 20 minutes after cooling to obtain a silicon substrate.

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Abstract

The invention discloses a silicon substrate, a manufacturing method therefor, and an IPD device comprising the silicon substrate. The silicon substrate is doped with P-type elements or N-type elements, and is also doped with a carbon element. Moreover, the carbon element and interstitial oxygen in the silicon substrate form a C-O composite body. The interstitial oxygen in the silicon substrate and the doped carbon element form the C-O composite body with better thermal stability, thereby enabling the concentration of the interstitial oxygen to be greatly reduced. Therefore, the prevention of interstitial oxygen from forming an oxygen-heat donor in a subsequent multi-step thermal processing technology is facilitated, thereby enabling the silicon substrate to keep a stable resistivity in the whole manufacturing process of the IPD device, and finally enabling the device to keep stable performance.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular, to a silicon substrate, a manufacturing method thereof, and an IPD device including the same. Background technique [0002] In the manufacture of IPD (Integrated Passive Device) passive devices, it is usually necessary to form functional areas on the silicon substrate, such as capacitors, inductors, resistors, and the like. In consideration of its special performance, IPD passive devices have higher requirements on the substrate. Generally, the resistivity of the silicon substrate is required to be greater than 2KΩ / cm -1 , At the same time, the silicon substrate is required to have a stable resistivity. [0003] Taking the P-type silicon substrate as an example, the P-type silicon substrate needs to be doped with a certain amount of P-type elements such as boron as the acceptor to meet the resistivity requirement. However, in the traditional silicon substrate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/02
Inventor 陈林李广宁
Owner SEMICON MFG INT (SHANGHAI) CORP